Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

Journal Article · · Semiconductors
; ; ; ;  [1]; ; ;  [2]; ;
  1. Russian Academy of Sciences, Saint Petersburg National Research Academic University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm{sup 2}, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.
OSTI ID:
22649681
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 50; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

Similar Records

Microdisk Injection Lasers for the 1.27-μm Spectral Range
Journal Article · Tue Mar 15 00:00:00 EDT 2016 · Semiconductors · OSTI ID:22645590

Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
Journal Article · Fri Jul 15 00:00:00 EDT 2011 · Semiconductors · OSTI ID:22004767

Lasing in microdisks of ultrasmall diameter
Journal Article · Sun Dec 14 23:00:00 EST 2014 · Semiconductors · OSTI ID:22300403