Lasing in microdisks of ultrasmall diameter
- St. Petersburg Academic University—Nanotechnology Research and Education Center, Russian Academy of Sciences (Russian Federation)
- University of Eastern Finland, Institute of Photonics (Finland)
- Tampere University of Technology, Optoelectronics Research Centre (Finland)
It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 μm. In 1-μm cavities, lasing occurs at the wavelength of one of the whispering-gallery modes within the band corresponding to the first excited-state optical transition.
- OSTI ID:
- 22300403
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 48; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
Journal Article
·
Sat Oct 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:22649681
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Journal Article
·
Tue Mar 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:22645590
Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
Journal Article
·
Tue Oct 15 00:00:00 EDT 2013
· Semiconductors
·
OSTI ID:22210486