Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Journal Article · Tue Oct 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613100187· OSTI ID:22210486

Zhukov, A. E.; Nadtochy, A. M. ^[1]; Maximov, M. V. ^[2]; Moiseev, E. I. ^[3]; Kulagina, M. M. ^[2]; Savelev, A. V.; Arakcheeva, E. M. ^[1]; Lipovskii, A. A. ^[3]; Zubov, F. I. ^[1]; Kapsalis, A.; Mesaritakis, C.; Syvridis, D. ^[4]; Mintairov, A. ^[5]; Livshits, D. ^[6]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
3. St. Petersburg Polytechnic University (Russian Federation)
4. University of Athens (Greece)
5. University of Notre Dame (United States)
6. Innolume GmbH (Germany)

Microring cavities (diameter D = 2.7-7 {mu}m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 {mu}m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 {mu}m.

• OSTI ID: 22210486
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 47; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM SELENIDES
OPTICAL MICROSCOPY
PHOTOLUMINESCENCE
QUANTUM DOTS