Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

Journal Article · Fri Jul 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611070116· OSTI ID:22004767

Blokhin, S A; Maximov, M V; Nadtochy, A M; Zhukov, A E; Fedorova, K V ^[1]; Ledentsov, N N; Ustinov, V M; Il'inskaya, N D ^[2]; Bimberg, D ^[3]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
3. Technische Universitaet, Institut fuer Festkoerperphysik (Germany)

Effect of parameters of the AlGaAs-(AlGa){sub x}O{sub y} layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al{sub 0.97}Ga{sub 0.03}As layer results in a decrease in the intensity of 'whispering gallery mode' lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.

• OSTI ID: 22004767
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALGAE
ALUMINIUM ARSENIDES
EMISSION SPECTRA
EXCITATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
LAYERS
LEAKS
OXIDATION
QUANTUM DOTS
SUBSTRATES