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Title: Role of defects in BiFeO₃ multiferroic films and their local electronic structure by x-ray absorption spectroscopy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4898196· OSTI ID:22305822
; ; ; ; ;  [1];  [2]
  1. Nano Material Analysis Centre, Korean Institute of Science and Technology, Seoul 136-79 (Korea, Republic of)
  2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

Present study reports the role of defects in the electrical transport in BiFeO₃ (BFO) multiferroic films and its local electronic structure investigated by near-edge X-ray absorption fine structure. Defects created by high energy 200 MeV Ag⁺¹⁵ ion irradiation with a fluence of ∼5 × 10¹¹ ions/cm² results in the increase in structural strain and reduction in the mobility of charge carriers and enhancement in resistive (I-V) and polarization (P-E) switching behaviour. At higher fluence of ∼5 × 10¹² ions/cm², there is a release in the structural strain due to local annealing effect, resulting in an increase in the mobility of charge carriers, which are released from oxygen vacancies and hence suppression in resistive and polarization switching. Near-edge X-ray absorption fine structure studies at Fe L₃,₂- and O K-edges show a significant change in the spectral features suggesting the modifications in the local electronic structure responsible for changes in the intrinsic magnetic moment and electrical transport properties of BFO.

OSTI ID:
22305822
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English