Electrical and magnetic properties of multiferroic BiFeO{sub 3}/CoFe{sub 2}O{sub 4} heterostructure

Journal Article · Fri Aug 01 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2966696· OSTI ID:21137430

Zheng, R Y; Wang, J ^[1]; Ramakrishna, S ^[2]

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1. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)
2. Division of Bioengineering, National University of Singapore, Singapore 117574 (Singapore)

To realize a magnetoelectric heterostructure with desired ferroelectric and magnetic properties, a heterostructure consisting of BiFeO{sub 3} (BFO)/CoFe{sub 2}O{sub 4} (CFO) layers has been grown on SrRuO{sub 3} buffered Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by rf sputtering. X-ray diffraction shows that the BFO and CFO phases have been successfully retained in the heterostructure. Grain growth of the CFO phase was enhanced on top of the BFO layer. The heterostructure exhibits both ferroelectric and magnetic behaviors at room temperature. Its remanent polarization (2P{sub r}) is measured to be {approx}146 {mu}C/cm{sup 2} and the coercive field (2E{sub c}) is {approx}1803 kV/cm, while the saturation magnetization (2M{sub s}) is 140 emu/cm{sup 3} and the coercive field (2H{sub c}) is {approx}2.7 kOe. The leakage current behavior of the heterostructure is consistent with space charge limited conduction mechanism. While the heterostructure is promising for multiferroic behavior, it would be necessary to control the structural defects such that the leakage is minimized.

• OSTI ID: 21137430
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 3; Other Information: DOI: 10.1063/1.2966696; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
COBALT OXIDES
DEPOSITION
FERROELECTRIC MATERIALS
GRAIN GROWTH
IRON COMPOUNDS
LAYERS
LEAKAGE CURRENT
MAGNETIC PROPERTIES
MAGNETIZATION
PLATINUM
POLARIZATION
SILICON OXIDES
SPACE CHARGE
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TITANIUM OXIDES
X-RAY DIFFRACTION