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Title: Multiferroic behavior and impedance spectroscopy of bilayered BiFeO{sub 3}/CoFe{sub 2}O{sub 4} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3153955· OSTI ID:21352263
;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)

Lead-free bilayered multiferroic thin films consisting of BiFeO{sub 3} (BFO) and CoFe{sub 2}O{sub 4} (CFO) layers with different thicknesses were grown on SrRuO{sub 3}-coated Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by radio frequency sputtering. The effects of constituent layer thicknesses on the ferroelectric and magnetic behavior have been studied. The physical behaviors are shown to strongly depend on the thicknesses of the constituent layers. BFO (220 nm)/CFO (30 nm) bilayered thin film demonstrated much improved ferroelectric and ferromagnetic behavior (2P{sub r}=144.2 muC/cm{sup 2}, 2E{sub c}=778.0 kV/cm, M{sub s}=61.2 emu/cm{sup 3}, and H{sub c}=200.8 Oe) as compared to those of the single layer BFO thin film. The dielectric behavior and conductivity of BFO (220 nm)/CFO (30 nm) bilayered thin film were investigated as a function of both temperature (in the range of 294-534 K) and frequency (in the range of 10{sup -1}-10{sup 6} Hz), where an activation energy of approx1.11 eV for dielectric relaxation was demonstrated. From the conductivity behavior, an activation energies of approx0.98 eV was derived for dc conductivity are, implying that oxygen vacancies are involved in the conduction of the BFO (220 nm)/CFO (30 nm) bilayered film.

OSTI ID:
21352263
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 12; Other Information: DOI: 10.1063/1.3153955; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English