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Orientation dependence of ferroelectric behavior of BiFeO{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3261841· OSTI ID:21361936
;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)

Multiferroic BiFeO{sub 3} (BFO) thin films with (111), (100), (110) preferred, and random orientations were deposited by radio frequency magnetron sputtering on SrRuO{sub 3}-buffered SrTiO{sub 3}(111), SrTiO{sub 3}(100), SrTiO{sub 3}(110), and Pt(111)/Ti/SiO{sub 2}/Si(100) substrates, respectively. The orientation dependences of ferroelectric and fatigue behavior of the BFO thin films were investigated. As expected, the (111)-oriented BFO thin film exhibits the highest, giant ferroelectric polarization (2P{sub r}=196.9 muC/cm{sup 2}) at 1 kHz and room temperature using positive up negative down measurement, while the (100)-oriented BFO thin film possesses an almost fatigue-free behavior up to 5.25x10{sup 7} switching cycles when measured at 100 kHz and room temperature. The observed behavior confirms that the largest spontaneous polarization direction and the fatigue endurance are (111) and (100) for BFO thin films, respectively. Regardless of the film orientation, the charge carriers that are responsible for dielectric relaxation and conductivity are oxygen vacancies (V{sub O}) .

OSTI ID:
21361936
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English