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Effects of SrRuO{sub 3} buffer layer thickness on multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3213335· OSTI ID:21361811
;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, 117574 Singapore (Singapore)

Multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} (BLFMO) thin films were deposited on SrRuO{sub 3} (SRO) buffered Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrates with variable buffer layer thicknesses by using off-axis radio frequency sputtering. The orientation of BLFMO thin films is dependent on the SRO buffer layer thickness, which leads to a change in ferroelectric behavior. Due to the low leakage currents arising from the orientation change in association with the variation in SRO buffer layer thickness and the La and Mn codoping, well saturated P-E hysteresis loops (2P{sub r}approx210.0 muC/cm{sup 2} and 2E{sub c}approx525.5 kV/cm) are shown for the (111)-oriented BLFMO thin film at room temperature and 1 kHz. It also demonstrates little ferroelectric fatigue on 10{sup 9} switching cycles. Moreover, the BLFMO thin film exhibits the enhanced magnetic behavior as compared to pure BFO thin films, due to the canting of antiferromagnetically ordered spins.

OSTI ID:
21361811
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English