Electrical behavior and oxygen vacancies in BiFeO{sub 3}/[(Bi{sub 1/2}Na{sub 1/2}){sub 0.94}Ba{sub 0.06}]TiO{sub 3} thin film
- Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)
Multiferroic bilayered thin films consisting of [(Bi{sub 1/2}Na{sub 1/2}){sub 0.94}Ba{sub 0.06}]TiO{sub 3} (BNBT) and BiFeO{sub 3} (BFO) nanolayers were successfully grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2P{sub r}{approx}79.7 {mu}C/cm{sup 2}, 2E{sub c}{approx}772.6 kV/cm, {epsilon}{sub r}{approx}178, and tan {delta}{approx}0.03), together with a long fatigue endurance up to 1x10{sup 10} switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film.
- OSTI ID:
- 21294442
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BARIUM COMPOUNDS
BISMUTH COMPOUNDS
DEPOSITION
FERROELECTRIC MATERIALS
IMPEDANCE
IONIZATION
NANOSTRUCTURES
OXYGEN
PERMITTIVITY
PLATINUM
RADIOWAVE RADIATION
SILICON
SILICON OXIDES
SODIUM COMPOUNDS
SOL-GEL PROCESS
SPUTTERING
THIN FILMS
TITANATES
TITANIUM OXIDES
VACANCIES