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Electrical behavior and oxygen vacancies in BiFeO{sub 3}/[(Bi{sub 1/2}Na{sub 1/2}){sub 0.94}Ba{sub 0.06}]TiO{sub 3} thin film

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3259655· OSTI ID:21294442
; ;  [1]
  1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574 (Singapore)

Multiferroic bilayered thin films consisting of [(Bi{sub 1/2}Na{sub 1/2}){sub 0.94}Ba{sub 0.06}]TiO{sub 3} (BNBT) and BiFeO{sub 3} (BFO) nanolayers were successfully grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2P{sub r}{approx}79.7 {mu}C/cm{sup 2}, 2E{sub c}{approx}772.6 kV/cm, {epsilon}{sub r}{approx}178, and tan {delta}{approx}0.03), together with a long fatigue endurance up to 1x10{sup 10} switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film.

OSTI ID:
21294442
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 95; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English