Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films

Saremi, Sahar; Xu, Ruijuan; Dedon, Liv R.; Gao, Ran; Ghosh, Anirban; Dasgupta, Arvind; Martin, Lane W.

doi:10.1002/admi.201700991

Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO₃ Thin Films

Journal Article · Wed Nov 29 23:00:00 EST 2017 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201700991· OSTI ID:1530334

^[1]; Xu, Ruijuan ^[1]; Dedon, Liv R. ^[1]; Gao, Ran ^[1]; Ghosh, Anirban ^[1]; Dasgupta, Arvind ^[2]; Martin, Lane W. ^[2]

Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Despite continued interest in the multiferroic BiFeO₃ for a diverse range of applications, use of this material is limited by its poor electrical leakage. This work demonstrates some of the most resistive BiFeO₃ thin films reported to date via defect engineering achieved via high-energy ion bombardment. High leakage in as-grown BiFeO₃ thin films is shown to be due to the presence of moderately shallow isolated trap states, which form during growth. Ion bombardment is shown to be an effective way to reduce this free carrier transport (by up to ≈4 orders of magnitude) by trapping the charge carriers in bombardment-induced, deep-lying defect complexes and clusters. The ion bombardment is also found to give rise to an increased resistance to switching as a result of an increase in defect concentration. This study demonstrates a systematic ion-dose-dependent increase in the coercivity, extension of the defect-related creep regime, increase in the pinning activation energy, decrease in the switching speed, and broadening of the field distribution of switching. Ultimately, the use of such defect-engineering routes to control materials will require identification of an optimum range of ion dosage to achieve maximum enhancement in resistivity with minimum impact on ferroelectric switching.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530334

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 3 Vol. 5; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Figure 1(p. 23)

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Figure 3(p. 25)

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