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Title: Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.
Authors:
 [1] ;  [2] ; ;  [1] ; ;  [3] ;  [3] ;  [2] ;  [2]
  1. Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan)
  2. (Japan)
  3. Research Institute of Electrical Communication, Tohoku University, Sendai (Japan)
Publication Date:
OSTI Identifier:
22273721
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; CRITICAL CURRENT; DIFFERENTIAL EQUATIONS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; IRRADIATION; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SILICON; SIMULATORS; SURFACES; TUNNEL EFFECT; WAVE FORMS