Modification of single event upset cross section of an SRAM at high frequencies

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.510735· OSTI ID:277733

Buchner, S ^[1]; Campbell, A B; McMorrow, D; Melinger, J ^[2]; Masti, M; Chen, Y J ^[3]

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1. SFA, Inc., Landover, MD (United States)
2. Naval Research Lab., Washington, DC (United States)
3. Univ. of Maryland, Baltimore, MD (United States)

Single event upsets (SEU) occur in integrated circuits when ions, such as a cosmic rays, pass through sensitive transistors and deposit sufficient charge to switch the logic state of the transistor. Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program.

• OSTI ID: 277733
• Report Number(s): CONF-9509107--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
COMPUTERIZED SIMULATION
COSMIC RADIATION
ERRORS
EXPERIMENTAL DATA
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES
THEORETICAL DATA