Mechanisms and modeling of single-event upset
Conference
·
OSTI ID:1264
- Sandia National Laboratories, 01727
The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junctions and transistors, and properties of single-event upset in CMOS static random access memory (SRAM) cells. The mechanisms are illustrated through the use of three-dimensional device and circuit simulations. Technology trends and implications for commercial devices are discussed.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM
- Sponsoring Organization:
- USDOE Office of Human Resource
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1264
- Report Number(s):
- SAND--98-2076C; 40040370900; ON: DE00001264
- Country of Publication:
- United States
- Language:
- English
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