Laser simulation of single event upsets

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7021160

Buchner, S P; Wilson, D; Kang, K; Gill, D; Mazer, J A; Raburn, W D; Campbell, A B; Knudson, A R

A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a picosecond laser could measure circuit sensitivity to SEUs. The technique makes it possible not only to test circuits rapidly for upset sensitivity but also, because the beam can be focussed down to a small spot size, to identify sensitive transistors.

• Research Organization: Martin Marietta Labs., 1450 South Rolling Road, Baltimore, MD (US)
• OSTI ID: 7021160
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
IRRADIATION
LASER RADIATION
LOGIC CIRCUITS
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS