Single event upset in irradiated 16k CMOS SRAMs
The Single Event Upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space applications are experimentally and theoretically investigated. Simulations of SEU sensitivity utilizing a 2D circuit/device simulator, with measured transistor threshold-voltage shifts and mobility degradations as inputs, are shown to be in good agreement with experimental data at high total dose. Both simulation and experiment show a strong SRAM cell SEU imbalance, resulting in a more SEU tolerant preferred state and a less tolerant non-preferred state. The resulting cell imbalance causes an overall degradation in SEU immunity which increases with increasing total dose and which should be taken into account in SEU testing and part characterization.
- Research Organization:
- Sandia National Labs., Div. 2147, Albuquerque, NM (US); Aerospace Corp., Los Angeles, CA (US)
- OSTI ID:
- 6176999
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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FUNCTIONAL MODELS
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