In-flight and ground testing of single event upset sensitivity in static RAMs
Journal Article
·
· IEEE Transactions on Nuclear Science
- Ericsson Saab Avionics AB, Linkoeping (Sweden)
- Aerospatiale Space and Defence, Les Mureaux (France)
- Aerospatiale Avions, Toulouse (France)
- Dassault Electronique, Saint-Cloud (France)
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources.
- OSTI ID:
- 644171
- Report Number(s):
- CONF-970934--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Neutron-induced single event upsets in static RAMS observed at 10 km flight altitude
Single event upset in avionics
Single-word multiple-bit upsets in static random access devices
Journal Article
·
Wed Mar 31 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6535585
Single event upset in avionics
Journal Article
·
Wed Mar 31 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6393164
Single-word multiple-bit upsets in static random access devices
Conference
·
Tue Nov 30 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6839965