Single-word multiple-bit upsets in static random access devices

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6839965

Koga, R; Pinkerton, S D; Lie, T J; Crawford, K B ^[1]

---

1. Aerospace Corp., Los Angeles, CA (United States)

Energetic ions and protons can cause single event upsets (SEUs) in static random access memory (SRAM) cells. In some cases multiple bits may be upset as the result of a single event. Space-borne electronics systems incorporating high-density SRAM are vulnerable to single-word multiple-bit upsets (SMUs). The authors review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU.

• OSTI ID: 6839965
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
IONIZING RADIATIONS
MEMORY DEVICES
MITIGATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SPACE FLIGHT