Neutron-induced single event upsets in static RAMS observed at 10 km flight altitude

Journal Article · Wed Mar 31 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.212319· OSTI ID:6535585

Olsen, J; Becher, P E; Fynbo, P B ^[1]

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1. Risoe National Lab., Roskilde (Denmark)

Neutron induced single event upsets (SEUs) in static memory devices (SRAMs) have so far been seen only in laboratory environments. The authors report observations of 14 neutron induced SEUs at commercial aircraft flight altitudes as well. The observed SEU rate at 10 km flight altitude based on exposure of 160 standard 256 Kbit CMOS SRAMs is 4.8 [center dot] 10[sup [minus]8] upsets/bit/day. In the laboratory 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, among these are two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMS.

• OSTI ID: 6535585
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:2; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AIRCRAFT
BARYONS
COMPARATIVE EVALUATIONS
COMPUTERS
COSMIC RADIATION
ELEMENTARY PARTICLES
EVALUATION
FAILURES
FERMIONS
HADRONS
IONIZING RADIATIONS
MEMORY DEVICES
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SECONDARY COSMIC RADIATION