Neutron induced single-word multiple-bit upset in SRAM
The Single-word Multiple-bit Upset (SMU) frequency for nine commercial Static Random Access Memories (SRAM) have been evaluated at eight different neutron energies: 0-11MeV, 14MeV, 22MeV, 35MeV, 45MeV, 75MeV, 96MeV, 160MeV. The SRAM types used at these experiments have sizes from 256Kbit up to 1Mbit, with date-codes ranging from 9209 up to 9809. The result showed a slightly rising dependence on the neutron energy. Also experiments at two neutron energies, 45MeV and 96MeV, were performed where the supply voltage influence on the SMU-rate was studied. Five device types were used at 96MeV and the supply voltage was changed between 5V, 3.3V and 2.5V. At 45MeV three devices at 5V and 3.3V were irradiated. The experiments showed a relation between the amount of total upset and SMU that indicates no clear supply voltage dependence.
- Research Organization:
- Ericsson Saab Avionics AB (SE)
- OSTI ID:
- 20014695
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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