Single event upset in SOS integrated circuits
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7255140
Single event upset (SEU) by argon and krypton ions has been observed in 1.25 micron CMOS-SOS integrated circuits. Mixed-mode PISCES-SPICE, circuity-device simulations were conducted and the calculated LET threshold compared favorably to experimental data. Analysis with the two-dimensional finite element PISCES code has revealed the upset charge collection mechanism involves charge multiplication due to bipolar action.
- Research Organization:
- The Aerospace Corp., P.O. Box 92957, Los Angeles, CA (US)
- OSTI ID:
- 7255140
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Laser simulation of single event upsets
Single event effects in static and dynamic registers in a 0.25{micro}m CMOS technology
Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser
Conference
·
Mon Nov 30 23:00:00 EST 1987
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:7021160
Single event effects in static and dynamic registers in a 0.25{micro}m CMOS technology
Journal Article
·
Tue Nov 30 23:00:00 EST 1999
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
·
OSTI ID:20014696
Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser
Conference
·
Wed Nov 30 23:00:00 EST 1994
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6450343
Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
99 GENERAL AND MISCELLANEOUS
990220 -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
ARGON IONS
CALCULATION METHODS
CHANNELING
CHARGED PARTICLES
COMPUTER CODES
DATA
ELECTRONIC CIRCUITS
ENERGY TRANSFER
EXPERIMENTAL DATA
FINITE ELEMENT METHOD
INFORMATION
ION CHANNELING
IONS
KRYPTON IONS
LET
MOS TRANSISTORS
NUMERICAL DATA
NUMERICAL SOLUTION
P CODES
PERFORMANCE TESTING
SEMICONDUCTOR DEVICES
SIMULATION
TESTING
TRANSISTORS
TWO-DIMENSIONAL CALCULATIONS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
99 GENERAL AND MISCELLANEOUS
990220 -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
ARGON IONS
CALCULATION METHODS
CHANNELING
CHARGED PARTICLES
COMPUTER CODES
DATA
ELECTRONIC CIRCUITS
ENERGY TRANSFER
EXPERIMENTAL DATA
FINITE ELEMENT METHOD
INFORMATION
ION CHANNELING
IONS
KRYPTON IONS
LET
MOS TRANSISTORS
NUMERICAL DATA
NUMERICAL SOLUTION
P CODES
PERFORMANCE TESTING
SEMICONDUCTOR DEVICES
SIMULATION
TESTING
TRANSISTORS
TWO-DIMENSIONAL CALCULATIONS