Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser
- Naval Research Lab., Washington, DC (United States) SFA Inc., Landover, MD (United States)
- Naval Research Lab., Washington, DC (United States)
- Harris Semiconductor, Schaumberg, IL (United States)
Pulsed laser light was used to measure single event upset (SEU) thresholds for a large number of memory cells in both CMOS and bipolar SRAMs. Results showed that small variations in intercell upset threshold could not explain the gradual rise in the curve of cross section versus linear energy transfer (LET). The memory cells exhibited greater intracell variations implying that the charge collection efficiency within a memory cell varies spatially and contributes substantially to the shape of the curve of cross section versus LET. The results also suggest that the pulsed laser can be used for hardness-assurance measurements on devices with sensitive areas larger than the diameter of the laser beam.
- OSTI ID:
- 6450343
- Report Number(s):
- CONF-940726--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
DATA
ELECTROMAGNETIC RADIATION
ERRORS
EXPERIMENTAL DATA
INFORMATION
IONS
LASER RADIATION
MEASURING METHODS
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS