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Title: Intermediate Bandgap Solar Cells From Nanostructured Silicon

Technical Report ·
DOI:https://doi.org/10.2172/1163091· OSTI ID:1163091
 [1]
  1. Bandgap Engineering, Lincoln, MA (United States)

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Research Organization:
Bandgap Engineering, Lincoln, MA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
EE0005323
OSTI ID:
1163091
Report Number(s):
final rppr technical report
Country of Publication:
United States
Language:
English

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