Vapor-liquid-solid growth of <110> silicon nanowire arrays
Journal Article
·
· Proceedings of SPIE - The International Society for Optical Engineering
- Pennsylvania State Univ., University Park, PA (United States); Bandgap Engineering
- Pennsylvania State Univ., University Park, PA (United States)
- Bandgap Engineering Inc., Woburn, MA (United States)
The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. Furthermore, the predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.
- Research Organization:
- Bandgap Engineering Inc., Woburn, MA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Program (EE-2A)
- DOE Contract Number:
- EE0005323
- OSTI ID:
- 1149578
- Journal Information:
- Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 8820; ISSN 0277-786X
- Publisher:
- SPIE
- Country of Publication:
- United States
- Language:
- English
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