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Vapor-liquid-solid growth of <110> silicon nanowire arrays

Journal Article · · Proceedings of SPIE - The International Society for Optical Engineering
DOI:https://doi.org/10.1117/12.2026825· OSTI ID:1149578
 [1];  [2];  [2];  [2];  [2];  [3];  [3];  [2]
  1. Pennsylvania State Univ., University Park, PA (United States); Bandgap Engineering
  2. Pennsylvania State Univ., University Park, PA (United States)
  3. Bandgap Engineering Inc., Woburn, MA (United States)
The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. Furthermore, the predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.
Research Organization:
Bandgap Engineering Inc., Woburn, MA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Program (EE-2A)
DOE Contract Number:
EE0005323
OSTI ID:
1149578
Journal Information:
Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 8820; ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English

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