Different growth rates for catalyst-induced and self-induced GaN nanowires

Journal Article · Mon Oct 11 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3488010· OSTI ID:21464520

Cheze, C; Geelhaar, L; Jenichen, B; Riechert, H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined by the impinging N rate. The self-induced nanowire growth rate is identical on both Si(111) and Si(001) and approaches the impinging N rate only for the few longest nanowires. This difference is attributed to the presence of the Ni-catalyst which enhances the incorporation of Ga at the nanowire tip while for the self-induced nanowires, growth is limited by the different incorporation rates on the nanowire tip and sidewall facets.

• OSTI ID: 21464520
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSIS
CATALYSTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DEFORMATION
ELEMENTS
ELONGATION
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON