Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Journal Article · Mon Jun 27 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3604810· OSTI ID:21518502

Woelz, M; Kaganer, V M; Brandt, O; Geelhaar, L; Riechert, H

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

• OSTI ID: 21518502
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
DIFFUSION
DIMENSIONS
EPITAXY
FABRICATION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PLASMA
PNICTIDES
PROCESSING
QUANTUM WELLS
QUANTUM WIRES
SCATTERING
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THICKNESS
X-RAY DIFFRACTION