In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]
Abstract
Chalcogenide thin films that undergo reversible phase changes show promise for use in next-generation nanophotonics, microelectronics, and other emerging technologies. One of the many studied compounds, Ge 2 Sb 2 Te 5 , has demonstrated several useful properties and performance characteristics. However, the efficacy of benchmark Ge 2 Sb 2 Te 5 is restricted by amorphous phase thermal stability below ∼150 °C, limiting its potential use in high-temperature applications. In response, previous studies have added a fourth species (e.g., C) to sputter-deposited Ge 2 Sb 2 Te 5 , demonstrating improved thermal stability. Our current research confirms reported thermal stability enhancements and assesses the effects of carbon on crystalline phase radiation response. Through in situ transmission electron microscope irradiation studies, we examine the effect of C addition on the amorphization behavior of initially cubic and trigonal polycrystalline films irradiated using 2.8 MeV Au to various doses up to 1 × 10 15 cm −2 . It was found that increased C content reduces radiation tolerance of both cubic and trigonal phases.
- Authors:
-
[1];
[2];
[2];
[2]
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Material, Physical, and Chemical Sciences Center; University of New Mexico, Albuquerque, NM (United States)
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Material, Physical, and Chemical Sciences Center
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Material, Physical, and Chemical Sciences Center; University of Tennessee, Knoxville, TN (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); USDOE Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 2311567
- Alternate Identifier(s):
- OSTI ID: 1968506
- Report Number(s):
- SAND-2023-01808J
Journal ID: ISSN 0021-8979
- Grant/Contract Number:
- NA0003525; NA-0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 133; Journal Issue: 13; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; crystalline solids; amorphous materials; materials properties; polycrystalline material; ion beam analysis; thin films; transmission electron microscopy; chemical processes
Citation Formats
Lang, Eric, Clark, Trevor, Schoell, Ryan Michael, Hattar, Khalid, and Adams, David P. In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]. United States: N. p., 2023.
Web. doi:10.1063/5.0136748.
Lang, Eric, Clark, Trevor, Schoell, Ryan Michael, Hattar, Khalid, & Adams, David P. In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]. United States. https://doi.org/10.1063/5.0136748
Lang, Eric, Clark, Trevor, Schoell, Ryan Michael, Hattar, Khalid, and Adams, David P. Wed .
"In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]". United States. https://doi.org/10.1063/5.0136748. https://www.osti.gov/servlets/purl/2311567.
@article{osti_2311567,
title = {In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]},
author = {Lang, Eric and Clark, Trevor and Schoell, Ryan Michael and Hattar, Khalid and Adams, David P.},
abstractNote = {Chalcogenide thin films that undergo reversible phase changes show promise for use in next-generation nanophotonics, microelectronics, and other emerging technologies. One of the many studied compounds, Ge 2 Sb 2 Te 5 , has demonstrated several useful properties and performance characteristics. However, the efficacy of benchmark Ge 2 Sb 2 Te 5 is restricted by amorphous phase thermal stability below ∼150 °C, limiting its potential use in high-temperature applications. In response, previous studies have added a fourth species (e.g., C) to sputter-deposited Ge 2 Sb 2 Te 5 , demonstrating improved thermal stability. Our current research confirms reported thermal stability enhancements and assesses the effects of carbon on crystalline phase radiation response. Through in situ transmission electron microscope irradiation studies, we examine the effect of C addition on the amorphization behavior of initially cubic and trigonal polycrystalline films irradiated using 2.8 MeV Au to various doses up to 1 × 10 15 cm −2 . It was found that increased C content reduces radiation tolerance of both cubic and trigonal phases.},
doi = {10.1063/5.0136748},
journal = {Journal of Applied Physics},
number = 13,
volume = 133,
place = {United States},
year = {Wed Apr 05 00:00:00 EDT 2023},
month = {Wed Apr 05 00:00:00 EDT 2023}
}
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