Characterization of Ag {sub x}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 1-x}thin film by RF magnetron sputtering
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-Gu, Daejeon 305-701 (Korea, Republic of)
We reported the Ag adding effects on the crystallization behavior in Ge{sub 2}Sb{sub 2}Te{sub 5} film. Ag {sub x}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 1-x} films (where x = 0-0.2) were deposited on SiO{sub 2} wafer and glass substrate by RF magnetron co-sputtering and annealed by RTA (rapid thermal annealing) at various temperature to crystallize. The effects of Ag adding on the structural, thermal and electrical properties were measured by X-ray diffraction, X-ray reflectivity, AFM, SEM, DSC and 4-point probe analysis. It was found that the crystallization temperature increased by Ag adding in Ge{sub 2}Sb{sub 2}Te{sub 5} films. However, the surface of Ag {sub x}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 1-x} films got rough when annealing temperature and Ag contents increased. According to the Kissinger method, the activation energy for crystallization increased as the Ag content increased. It is thought that Ag atoms in Ge{sub 2}Sb{sub 2}Te{sub 5} act as an amorphous stabilizer and they make it hard to switch from amorphous to crystalline phase. From this study, we would show the Ag{sub 0.06}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 0.94} film is suitable for phase change memory material because of its higher crystallization temperature and structural stability.
- OSTI ID:
- 21003557
- Journal Information:
- Materials Characterization, Vol. 58, Issue 5; Other Information: DOI: 10.1016/j.matchar.2006.06.021; PII: S1044-5803(06)00213-0; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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