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Title: Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

Abstract

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be amore » promising phase change material with ultra-long data retention.« less

Authors:
; ; ;  [1]; ; ; ; ;  [1];  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22486154
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARRHENIUS EQUATION; CRYSTALS; DOPED MATERIALS; ELECTRIC POTENTIAL; FCC LATTICES; FILMS; OXIDATION; PHASE CHANGE MATERIALS; STABILITY; TEMPERATURE RANGE 0400-1000 K; THRESHOLD CURRENT

Citation Formats

Wang, Qing, Xia, Yangyang, Zheng, Yonghui, Zhang, Qi, University of the Chinese Academy of Sciences, Beijing 100049, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Liu, Bo, Song, Sannian, Cheng, Yan, Song, Zhitang, Feng, Songlin, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Huo, Ruru, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, and ShanghaiTech University, Shanghai 200031. Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory. United States: N. p., 2015. Web. doi:10.1063/1.4936847.
Wang, Qing, Xia, Yangyang, Zheng, Yonghui, Zhang, Qi, University of the Chinese Academy of Sciences, Beijing 100049, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Liu, Bo, Song, Sannian, Cheng, Yan, Song, Zhitang, Feng, Songlin, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Huo, Ruru, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, & ShanghaiTech University, Shanghai 200031. Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory. United States. https://doi.org/10.1063/1.4936847
Wang, Qing, Xia, Yangyang, Zheng, Yonghui, Zhang, Qi, University of the Chinese Academy of Sciences, Beijing 100049, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Liu, Bo, Song, Sannian, Cheng, Yan, Song, Zhitang, Feng, Songlin, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Huo, Ruru, Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, and ShanghaiTech University, Shanghai 200031. Mon . "Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory". United States. https://doi.org/10.1063/1.4936847.
@article{osti_22486154,
title = {Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory},
author = {Wang, Qing and Xia, Yangyang and Zheng, Yonghui and Zhang, Qi and University of the Chinese Academy of Sciences, Beijing 100049 and Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 and Liu, Bo and Song, Sannian and Cheng, Yan and Song, Zhitang and Feng, Songlin and Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 and Huo, Ruru and Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 and ShanghaiTech University, Shanghai 200031},
abstractNote = {Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.},
doi = {10.1063/1.4936847},
url = {https://www.osti.gov/biblio/22486154}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}