Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE
Abstract
Here we report ultra-high responsivity of epitaxial (SnxGa1–x)2O3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (–201) oriented n-type β-Ga2O3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×104 A/W at –5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (~2.20 eV) not seen in β-Ga2O3 along with enhancement of the blue emission-band (~2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga2O3, VGa–Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga2O3 devices by means of thermionic emission andmore »
- Authors:
-
[1];
[2];
[3];
[4];
[5];
[6];
[5];
[5];
[7];
[7];
[8]
- Univ. of Central Florida, Orlando, FL (United States). College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL)
- Şırnak University (Turkey)
- Univ. of Oslo (Norway)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Univ. of Strathclyde, Glasgow, Scotland (United Kingdom)
- Cardiff Univ., Wales (United Kingdom)
- Univ. of California, Santa Barbara, CA (United States)
- Univ. of Central Florida, Orlando, FL (United States). College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL); Univ. of Central Florida, Orlando, FL (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO); USDOE Laboratory Directed Research and Development (LDRD) Program; Research Council of Norway
- OSTI Identifier:
- 1959542
- Alternate Identifier(s):
- OSTI ID: 1887904
- Report Number(s):
- LLNL-JRNL-842526
Journal ID: ISSN 0003-6951; 1064852; TRN: US2313207
- Grant/Contract Number:
- AC52-07NA27344; 314017; 22-SI-003
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 11; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; hybrid density functional calculations; photodetectors; alloys; first-principle calculations; electron tunneling; epitaxy; cathodoluminescence spectroscopy; crystallographic defects; thermionic emission; photoconductive materials
Citation Formats
Mukhopadhyay, Partha, Hatipoglu, Isa, Frodason, Ymir K., Varley, Joel B., Williams, Martin S., Hunter, Daniel A., Gunasekar, Naresh K., Edwards, Paul R., Martin, Robert W., Wu, Feng, Mauze, Akhil, Speck, James S., and Schoenfeld, Winston V. Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE. United States: N. p., 2022.
Web. doi:10.1063/5.0107557.
Mukhopadhyay, Partha, Hatipoglu, Isa, Frodason, Ymir K., Varley, Joel B., Williams, Martin S., Hunter, Daniel A., Gunasekar, Naresh K., Edwards, Paul R., Martin, Robert W., Wu, Feng, Mauze, Akhil, Speck, James S., & Schoenfeld, Winston V. Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE. United States. https://doi.org/10.1063/5.0107557
Mukhopadhyay, Partha, Hatipoglu, Isa, Frodason, Ymir K., Varley, Joel B., Williams, Martin S., Hunter, Daniel A., Gunasekar, Naresh K., Edwards, Paul R., Martin, Robert W., Wu, Feng, Mauze, Akhil, Speck, James S., and Schoenfeld, Winston V. Fri .
"Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE". United States. https://doi.org/10.1063/5.0107557. https://www.osti.gov/servlets/purl/1959542.
@article{osti_1959542,
title = {Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE},
author = {Mukhopadhyay, Partha and Hatipoglu, Isa and Frodason, Ymir K. and Varley, Joel B. and Williams, Martin S. and Hunter, Daniel A. and Gunasekar, Naresh K. and Edwards, Paul R. and Martin, Robert W. and Wu, Feng and Mauze, Akhil and Speck, James S. and Schoenfeld, Winston V.},
abstractNote = {Here we report ultra-high responsivity of epitaxial (SnxGa1–x)2O3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (–201) oriented n-type β-Ga2O3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×104 A/W at –5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (~2.20 eV) not seen in β-Ga2O3 along with enhancement of the blue emission-band (~2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga2O3, VGa–Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga2O3 devices by means of thermionic emission and electron tunneling. Regenerating the VGa–Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.},
doi = {10.1063/5.0107557},
journal = {Applied Physics Letters},
number = 11,
volume = 121,
place = {United States},
year = {Fri Sep 16 00:00:00 EDT 2022},
month = {Fri Sep 16 00:00:00 EDT 2022}
}
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Works referenced in this record:
Hydrogenated cation vacancies in semiconducting oxides
journal, August 2011
- Varley, J. B.; Peelaers, H.; Janotti, A.
- Journal of Physics: Condensed Matter, Vol. 23, Issue 33
Impact of proton irradiation on conductivity and deep level defects in β-Ga 2 O 3
journal, February 2019
- Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G.
- APL Materials, Vol. 7, Issue 2
Origin of photoluminescence in
journal, March 2018
- Ho, Quoc Duy; Frauenheim, Thomas; Deák, Peter
- Physical Review B, Vol. 97, Issue 11
β-Al 2 x Ga 2-2 x O 3 Thin Film Growth by Molecular Beam Epitaxy
journal, July 2009
- Oshima, Takayoshi; Okuno, Takeya; Arai, Naoki
- Japanese Journal of Applied Physics, Vol. 48, Issue 7
Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation
journal, November 2020
- Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.
- APL Materials, Vol. 8, Issue 11
Defects in Semiconductors: Some Fatal, Some Vital
journal, August 1998
- Queisser, H. J.
- Science, Vol. 281, Issue 5379
Tuning the responsivity of monoclinic $({In}_x{Ga}_{1-x})_2{O}_3$ solar-blind photodetectors grown by metal organic chemical vapor deposition
journal, August 2020
- Hatipoglu, Isa; Mukhopadhyay, Partha; Alema, Fikadu
- Journal of Physics D: Applied Physics, Vol. 53, Issue 45
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Hybrid functionals based on a screened Coulomb potential
journal, May 2003
- Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
- The Journal of Chemical Physics, Vol. 118, Issue 18
Finite-size corrections for defect-involving vertical transitions in supercell calculations
journal, January 2020
- Gake, Tomoya; Kumagai, Yu; Freysoldt, Christoph
- Physical Review B, Vol. 101, Issue 2
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
journal, May 2021
- Chang, Celesta S.; Tanen, Nicholas; Protasenko, Vladimir
- APL Materials, Vol. 9, Issue 5
Deep-level defects in gallium oxide
journal, November 2020
- Wang, Zhengpeng; Chen, Xuanhu; Ren, Fang-Fang
- Journal of Physics D: Applied Physics, Vol. 54, Issue 4
Ultrafast dynamics of gallium vacancy charge states in
β − Ga 2 O 3
journal, May 2021
- Singh, Arjan; Koksal, Okan; Tanen, Nicholas
- Physical Review Research, Vol. 3, Issue 2
Primary intrinsic defects and their charge transition levels in
journal, July 2020
- Zimmermann, C.; Rønning, V.; Kalmann Frodason, Y.
- Physical Review Materials, Vol. 4, Issue 7
Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy
journal, March 2019
- Mukhopadhyay, Partha; Schoenfeld, Winston V.
- Applied Optics, Vol. 58, Issue 13
Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3
journal, February 2020
- Frodason, Y. K.; Johansen, K. M.; Vines, L.
- Journal of Applied Physics, Vol. 127, Issue 7
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides
journal, February 2012
- Varley, J. B.; Janotti, A.; Franchini, C.
- Physical Review B, Vol. 85, Issue 8
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures
journal, December 2012
- Edwards, Paul R.; Jagadamma, Lethy Krishnan; Bruckbauer, Jochen
- Microscopy and Microanalysis, Vol. 18, Issue 6
First-principles calculations for point defects in solids
journal, March 2014
- Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
- Reviews of Modern Physics, Vol. 86, Issue 1
Tin-Assisted Synthesis of by Molecular Beam Epitaxy
journal, November 2017
- Kracht, M.; Karg, A.; Schörmann, J.
- Physical Review Applied, Vol. 8, Issue 5
Deep acceptors and their diffusion in Ga 2 O 3
journal, February 2019
- Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.
- APL Materials, Vol. 7, Issue 2
A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects
journal, March 2021
- Kaur, Damanpreet; Kumar, Mukesh
- Advanced Optical Materials, Vol. 9, Issue 9
Valence band ordering in β-Ga 2 O 3 studied by polarized transmittance and reflectance spectroscopy
journal, October 2015
- Onuma, Takeyoshi; Saito, Shingo; Sasaki, Kohei
- Japanese Journal of Applied Physics, Vol. 54, Issue 11
High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration
journal, February 2021
- Mukhopadhyay, Partha; Hatipoglu, Isa; Sakthivel, Tamil Selvan
- Advanced Photonics Research, Vol. 2, Issue 4
Emergent phenomena at oxide interfaces
journal, January 2012
- Hwang, H. Y.; Iwasa, Y.; Kawasaki, M.
- Nature Materials, Vol. 11, Issue 2
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β -Ga 2 O 3
journal, November 2020
- Li, Wenshen; Nomoto, Kazuki; Jena, Debdeep
- Applied Physics Letters, Vol. 117, Issue 22
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
journal, November 2019
- Johnson, Jared M.; Chen, Zhen; Varley, Joel B.
- Physical Review X, Vol. 9, Issue 4
High responsivity tin gallium oxide Schottky ultraviolet photodetectors
journal, January 2020
- Mukhopadhyay, Partha; Schoenfeld, Winston V.
- Journal of Vacuum Science & Technology A, Vol. 38, Issue 1
Near-ideal reverse leakage current and practical maximum electric field in β-Ga 2 O 3 Schottky barrier diodes
journal, May 2020
- Li, Wenshen; Saraswat, Devansh; Long, Yaoyao
- Applied Physics Letters, Vol. 116, Issue 19
Self-trapped holes in β-Ga 2 O 3 crystals
journal, December 2017
- Kananen, B. E.; Giles, N. C.; Halliburton, L. E.
- Journal of Applied Physics, Vol. 122, Issue 21
Ab initio calculations on the defect structure of -Ga O
journal, June 2013
- Zacherle, T.; Schmidt, P. C.; Martin, M.
- Physical Review B, Vol. 87, Issue 23
Oxygen vacancies: The (in)visible friend of oxide electronics
journal, March 2020
- Gunkel, F.; Christensen, D. V.; Chen, Y. Z.
- Applied Physics Letters, Vol. 116, Issue 12
Cathodoluminescence nano-characterization of semiconductors
journal, March 2011
- Edwards, Paul R.; Martin, Robert W.
- Semiconductor Science and Technology, Vol. 26, Issue 6
Point defects in Ga 2 O 3
journal, March 2020
- McCluskey, Matthew D.
- Journal of Applied Physics, Vol. 127, Issue 10
Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors
journal, November 2021
- Hatipoglu, Isa; Hunter, Daniel A.; Mukhopadhyay, Partha
- Journal of Applied Physics, Vol. 130, Issue 20
On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
journal, October 2021
- Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.
- Journal of Alloys and Compounds, Vol. 879
Multistability of isolated and hydrogenated Ga–O divacancies in
journal, February 2021
- Frodason, Y. K.; Zimmermann, C.; Verhoeven, E. F.
- Physical Review Materials, Vol. 5, Issue 2