Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Abstract
Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga2O3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.
- Authors:
-
[2];
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Auburn Univ., AL (United States). Department of Physics
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1249076
- Alternate Identifier(s):
- OSTI ID: 1421089
- Report Number(s):
- SAND-2016-2312J
Journal ID: ISSN 0021-8979; JAPIAU; 621965
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, and Dhar, Sarit. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes. United States: N. p., 2016.
Web. doi:10.1063/1.4943261.
Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, & Dhar, Sarit. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes. United States. https://doi.org/10.1063/1.4943261
Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, and Dhar, Sarit. Thu .
"Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes". United States. https://doi.org/10.1063/1.4943261. https://www.osti.gov/servlets/purl/1249076.
@article{osti_1249076,
title = {Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes},
author = {Armstrong, Andrew M. and Crawford, Mary H. and Jayawardena, Asanka and Ahyi, Ayayi and Dhar, Sarit},
abstractNote = {Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga2O3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.},
doi = {10.1063/1.4943261},
journal = {Journal of Applied Physics},
number = 10,
volume = 119,
place = {United States},
year = {Thu Mar 10 00:00:00 EST 2016},
month = {Thu Mar 10 00:00:00 EST 2016}
}
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Works referenced in this record:
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β- Ga 2 O 3 solar-blind ultraviolet photodetectors
journal, July 2014
- Guo, D. Y.; Wu, Z. P.; An, Y. H.
- Applied Physics Letters, Vol. 105, Issue 2
Deep UV photon-counting detectors and applications
conference, May 2009
- Shaw, Gary A.; Siegel, Andrew M.; Model, Joshua
- SPIE Defense, Security, and Sensing, SPIE Proceedings
Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
journal, June 2009
- Suzuki, Rikiya; Nakagomi, Shinji; Kokubun, Yoshihiro
- Applied Physics Letters, Vol. 94, Issue 22
Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
journal, January 2007
- Kokubun, Yoshihiro; Miura, Kasumi; Endo, Fumie
- Applied Physics Letters, Vol. 90, Issue 3
Deep ultraviolet photodiodes based on β-Ga 2 O 3 /SiC heterojunction
journal, August 2013
- Nakagomi, Shinji; Momo, Toshihiro; Takahashi, Syuhei
- Applied Physics Letters, Vol. 103, Issue 7
Depletion-mode Ga 2 O 3 metal-oxide-semiconductor field-effect transistors on β-Ga 2 O 3 (010) substrates and temperature dependence of their device characteristics
journal, September 2013
- Higashiwaki, Masataka; Sasaki, Kohei; Kamimura, Takafumi
- Applied Physics Letters, Vol. 103, Issue 12
Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer
journal, March 2011
- Suzuki, Rikiya; Nakagomi, Shinji; Kokubun, Yoshihiro
- Applied Physics Letters, Vol. 98, Issue 13
Dielectric properties of electron‐beam deposited Ga 2 O 3 films
journal, May 1994
- Passlack, M.; Hunt, N. E. J.; Schubert, E. F.
- Applied Physics Letters, Vol. 64, Issue 20
Contacts between simple metals and atomically clean silicon
journal, March 1975
- Thanailakis, A.
- Journal of Physics C: Solid State Physics, Vol. 8, Issue 5
Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
journal, August 1997
- Ueda, Naoyuki; Hosono, Hideo; Waseda, Ryuta
- Applied Physics Letters, Vol. 71, Issue 7
Deep level defects throughout the bandgap of (010) β-Ga 2 O 3 detected by optically and thermally stimulated defect spectroscopy
journal, February 2016
- Zhang, Z.; Farzana, E.; Arehart, A. R.
- Applied Physics Letters, Vol. 108, Issue 5
Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications
conference, February 2012
- Wuu, Dong-Sing; Ou, Sin-Liang; Horng, Ray-Hua
- SPIE OPTO, SPIE Proceedings
Correlation between blue luminescence intensity and resistivity in β -Ga 2 O 3 single crystals
journal, July 2013
- Onuma, T.; Fujioka, S.; Yamaguchi, T.
- Applied Physics Letters, Vol. 103, Issue 4
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
journal, December 2009
- Takakura, K.; Koga, D.; Ohyama, H.
- Physica B: Condensed Matter, Vol. 404, Issue 23-24
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
journal, December 2000
- Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro
- Applied Physics Letters, Vol. 77, Issue 25
Metal-semiconductor contacts
journal, January 1982
- Rhoderick, E. H.
- IEE Proceedings I Solid State and Electron Devices, Vol. 129, Issue 1
Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga 2 O 3 Substrates
journal, January 2008
- Oshima, Takayoshi; Okuno, Takeya; Arai, Naoki
- Applied Physics Express, Vol. 1, Issue 1
Synthesis of two-dimensional β-Ga 2 O 3 nanosheets for high-performance solar blind photodetectors
journal, January 2014
- Feng, Wei; Wang, Xiaona; Zhang, Jia
- J. Mater. Chem. C, Vol. 2, Issue 17
High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
journal, January 2015
- Hu, G. C.; Shan, C. X.; Zhang, Nan
- Optics Express, Vol. 23, Issue 10
A $\beta$-$\hbox{Ga}_{2} \hbox{O} _{3}$ Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film
journal, April 2011
- Weng, W. Y.; Hsueh, T. J.; Chang, S. J.
- IEEE Sensors Journal, Vol. 11, Issue 4
Vacancies and small polarons in
journal, August 2014
- Janotti, Anderson; Varley, Joel B.; Choi, Minseok
- Physical Review B, Vol. 90, Issue 8
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides
journal, February 2012
- Varley, J. B.; Janotti, A.; Franchini, C.
- Physical Review B, Vol. 85, Issue 8
Surface photovoltage phenomena: theory, experiment, and applications
journal, December 1999
- Kronik, L.
- Surface Science Reports, Vol. 37, Issue 1-5
Works referencing / citing this record:
Hole traps and persistent photocapacitance in proton irradiated β-Ga 2 O 3 films doped with Si
journal, September 2018
- Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
- APL Materials, Vol. 6, Issue 9
Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions
journal, August 2019
- Sun, Shun-Ming; Liu, Wen-Jun; Golosov, Dmitriy Anatolyevich
- Nanoscale Research Letters, Vol. 14, Issue 1
Point defect induced degradation of electrical properties of Ga 2 O 3 by 10 MeV proton damage
journal, January 2018
- Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
- Applied Physics Letters, Vol. 112, Issue 3
Electrical Properties of Vertical p‐NiO/n‐Ga 2 O 3 and p‐ZnCo 2 O 4 /n‐Ga 2 O 3 pn‐Heterodiodes
journal, March 2019
- Schlupp, Peter; Splith, Daniel; von Wenckstern, Holger
- physica status solidi (a), Vol. 216, Issue 7
Editors' Choice Communication—A (001) β-Ga 2 O 3 MOSFET with +2.9 V Threshold Voltage and HfO 2 Gate Dielectric
journal, January 2016
- Tadjer, Marko J.; Mahadik, Nadeemullah A.; Wheeler, Virginia D.
- ECS Journal of Solid State Science and Technology, Vol. 5, Issue 9
A review of Ga 2 O 3 materials, processing, and devices
journal, March 2018
- Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H.
- Applied Physics Reviews, Vol. 5, Issue 1
Temperature-Dependent Electrical Characteristics of β-Ga 2 O 3 Diodes with W Schottky Contacts up to 500°C
journal, December 2018
- Fares, Chaker; Ren, Fan; Pearton, S. J.
- ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
Band alignment of In 2 O 3 /β-Ga 2 O 3 interface determined by X-ray photoelectron spectroscopy
journal, July 2018
- Sun, Shun-Ming; Liu, Wen-Jun; Wang, Yong-Ping
- Applied Physics Letters, Vol. 113, Issue 3
Gallium oxide-based solar-blind ultraviolet photodetectors
journal, January 2020
- Chen, Xuanhu; Ren, Fang-Fang; Ye, Jiandong
- Semiconductor Science and Technology, Vol. 35, Issue 2
Impact of deep level defects induced by high energy neutron radiation in β-Ga 2 O 3
journal, February 2019
- Farzana, Esmat; Chaiken, Max F.; Blue, Thomas E.
- APL Materials, Vol. 7, Issue 2
Perspective—Opportunities and Future Directions for Ga 2 O 3
journal, January 2017
- Mastro, Michael A.; Kuramata, Akito; Calkins, Jacob
- ECS Journal of Solid State Science and Technology, Vol. 6, Issue 5
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
journal, January 2019
- Chen, Xuanhu; Ren, Fangfang; Gu, Shulin
- Photonics Research, Vol. 7, Issue 4
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga 2 O 3 layers grown by plasma-assisted molecular beam epitaxy
journal, December 2019
- Farzana, Esmat; Mauze, Akhil; Varley, Joel B.
- APL Materials, Vol. 7, Issue 12
Ga 2 O 3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm -2 figure-of-merit
journal, May 2018
- Yang, Jiancheng; Ren, F.; Tadjer, Marko
- AIP Advances, Vol. 8, Issue 5
Group-III Sesquioxides: Growth, Physical Properties and Devices
journal, July 2017
- von Wenckstern, Holger
- Advanced Electronic Materials, Vol. 3, Issue 9
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga 2 O 3
journal, August 2018
- Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
- Applied Physics Letters, Vol. 113, Issue 9
Recent Advances in β-Ga2O3–Metal Contacts
journal, August 2018
- Huan, Ya-Wei; Sun, Shun-Ming; Gu, Chen-Jie
- Nanoscale Research Letters, Vol. 13, Issue 1
Radiation damage effects in Ga 2 O 3 materials and devices
journal, January 2019
- Kim, Jihyun; Pearton, Stephen J.; Fares, Chaker
- Journal of Materials Chemistry C, Vol. 7, Issue 1
2300V Reverse Breakdown Voltage Ga 2 O 3 Schottky Rectifiers
journal, January 2018
- Yang, Jiancheng; Ren, F.; Tadjer, Marko
- ECS Journal of Solid State Science and Technology, Vol. 7, Issue 5
Influence of incoherent twin boundaries on the electrical properties of β-Ga 2 O 3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
journal, October 2017
- Fiedler, A.; Schewski, R.; Baldini, M.
- Journal of Applied Physics, Vol. 122, Issue 16
Microwave irradiation-assisted deposition of Ga 2 O 3 on III-nitrides for deep-UV opto-electronics
journal, January 2018
- Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh
- Applied Physics Letters, Vol. 112, Issue 2
High-temperature photocurrent mechanism of β -Ga 2 O 3 based metal-semiconductor-metal solar-blind photodetectors
journal, April 2019
- Tak, B. R.; Garg, Manjari; Dewan, Sheetal
- Journal of Applied Physics, Vol. 125, Issue 14
Deep level defects in Ge-doped (010) β-Ga 2 O 3 layers grown by plasma-assisted molecular beam epitaxy
journal, April 2018
- Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.
- Journal of Applied Physics, Vol. 123, Issue 16
High responsivity in molecular beam epitaxy grown β-Ga 2 O 3 metal semiconductor metal solar blind deep-UV photodetector
journal, May 2017
- Singh Pratiyush, Anamika; Krishnamoorthy, Sriram; Vishnu Solanke, Swanand
- Applied Physics Letters, Vol. 110, Issue 22
Gamma Irradiation Effect on Performance of β-Ga 2 O 3 Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications
journal, January 2019
- Tak, B. R.; Garg, M.; Kumar, Ashish
- ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$ β -Ga 2 O 3 Schottky diodes
journal, September 2016
- Jayawardena, Asanka; Ahyi, Ayayi C.; Dhar, Sarit
- Semiconductor Science and Technology, Vol. 31, Issue 11
High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
text, January 2017
- Pratiyush, Anamika Singh; Krishnamoorthy, Sriram; Solanke, Swanand Vishnu
- arXiv
Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
text, January 2017
- Jaiswal, Piyush; Muazzam, Usman Ul; Pratiyush, Anamika Singh
- arXiv
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film
journal, January 2019
- Hu, Zhuangzhuang; Feng, Qian; Feng, Zhaoqing
- Nanoscale Research Letters, Vol. 14, Issue 1