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Title: Highly efficient solar-blind single photon detectors.

Abstract

Photodetectors sensitive to the ultra-violet spectrum were demonstrated using an AlGaN high electron mobility transistor with an GaN nanodot optical floating gate. Peak responsivity of 2 109 A/W was achieved with a gain-bandwidth product > 1 GHz at a cut-on energy of 4.10 eV. Similar devices exhibited visible-blind rejection ratios > 106. The photodetection mechanism for -Ga2O3 was also investigated. It was concluded that Schottky barrier lowering by self-trapped holes enables photodetector gain.

Authors:
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Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Auburn University, Auburn AL
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1529589
Report Number(s):
SAND2018-10857
668090
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Armstrong, Andrew, Pickrell, Gregory, Klein, Brianna Alexandra, Baca, Albert, Allerman, Andrew A., Crawford, Mary H., Perez, Carlos, Podkaminer, Jacob, Siegal, Michael P., Jayawardena, Asanka, Ahyi, Ayayi, and Dhar, Sarit. Highly efficient solar-blind single photon detectors.. United States: N. p., 2018. Web. doi:10.2172/1529589.
Armstrong, Andrew, Pickrell, Gregory, Klein, Brianna Alexandra, Baca, Albert, Allerman, Andrew A., Crawford, Mary H., Perez, Carlos, Podkaminer, Jacob, Siegal, Michael P., Jayawardena, Asanka, Ahyi, Ayayi, & Dhar, Sarit. Highly efficient solar-blind single photon detectors.. United States. doi:10.2172/1529589.
Armstrong, Andrew, Pickrell, Gregory, Klein, Brianna Alexandra, Baca, Albert, Allerman, Andrew A., Crawford, Mary H., Perez, Carlos, Podkaminer, Jacob, Siegal, Michael P., Jayawardena, Asanka, Ahyi, Ayayi, and Dhar, Sarit. Sat . "Highly efficient solar-blind single photon detectors.". United States. doi:10.2172/1529589. https://www.osti.gov/servlets/purl/1529589.
@article{osti_1529589,
title = {Highly efficient solar-blind single photon detectors.},
author = {Armstrong, Andrew and Pickrell, Gregory and Klein, Brianna Alexandra and Baca, Albert and Allerman, Andrew A. and Crawford, Mary H. and Perez, Carlos and Podkaminer, Jacob and Siegal, Michael P. and Jayawardena, Asanka and Ahyi, Ayayi and Dhar, Sarit},
abstractNote = {Photodetectors sensitive to the ultra-violet spectrum were demonstrated using an AlGaN high electron mobility transistor with an GaN nanodot optical floating gate. Peak responsivity of 2 109 A/W was achieved with a gain-bandwidth product > 1 GHz at a cut-on energy of 4.10 eV. Similar devices exhibited visible-blind rejection ratios > 106. The photodetection mechanism for -Ga2O3 was also investigated. It was concluded that Schottky barrier lowering by self-trapped holes enables photodetector gain.},
doi = {10.2172/1529589},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {9}
}