Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
Abstract
III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier-recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Univ. of New Mexico, Albuquerque, NM (United States)
- Lumileds LLC, San Jose, CA (United States)
- Publication Date:
- Research Org.:
- Lumileds LLC, San Jose, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1959226
- Alternate Identifier(s):
- OSTI ID: 1906232
- Report Number(s):
- DOE-LUM-09163-231
Journal ID: ISSN 2158-3226; TRN: US2312842
- Grant/Contract Number:
- EE0009163; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 12; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; Quantum wells; Emission spectroscopy; Spectral linewidths; Light emitting diodes; Local density approximations; Charge recombination; Optoelectronic devices; Nitrides; Electroluminescent spectra; Multiscale methods
Citation Formats
Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, and Kioupakis, Emmanouil. Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes. United States: N. p., 2022.
Web. doi:10.1063/5.0134995.
Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, & Kioupakis, Emmanouil. Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes. United States. https://doi.org/10.1063/5.0134995
Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, and Kioupakis, Emmanouil. Wed .
"Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes". United States. https://doi.org/10.1063/5.0134995. https://www.osti.gov/servlets/purl/1959226.
@article{osti_1959226,
title = {Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes},
author = {Pant, Nick and Li, Xuefeng and DeJong, Elizabeth and Feezell, Daniel and Armitage, Rob and Kioupakis, Emmanouil},
abstractNote = {III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier-recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.},
doi = {10.1063/5.0134995},
journal = {AIP Advances},
number = 12,
volume = 12,
place = {United States},
year = {Wed Dec 21 00:00:00 EST 2022},
month = {Wed Dec 21 00:00:00 EST 2022}
}
Works referenced in this record:
Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”
journal, May 2018
- Karpov, Sergey
- Applied Sciences, Vol. 8, Issue 5
Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
journal, August 2012
- Bochkareva, N. I.; Voronenkov, V. V.; Gorbunov, R. I.
- Semiconductors, Vol. 46, Issue 8
Prospects for LED lighting
journal, April 2009
- Pimputkar, Siddha; Speck, James S.; DenBaars, Steven P.
- Nature Photonics, Vol. 3, Issue 4
Piezoelectric effects in the optical properties of strained InGaN quantum wells
journal, February 1999
- Peng, L. -H.; Chuang, C. -W.; Lou, L. -H.
- Applied Physics Letters, Vol. 74, Issue 6
All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation
journal, June 2017
- David, Aurelien; Young, Nathan G.; Hurni, Christophe A.
- Applied Physics Letters, Vol. 110, Issue 25
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
journal, June 2016
- Davies, M. J.; Dawson, P.; Hammersley, S.
- Applied Physics Letters, Vol. 108, Issue 25
Diode Lasers and Photonic Integrated Circuits
book, January 2012
- Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L.
- John Wiley & Sons, Inc.
Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire
journal, May 2004
- Chitnis, Ashay; Chen, Changqing; Adivarahan, Vinod
- Applied Physics Letters, Vol. 84, Issue 18
On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
journal, May 2012
- Bhattacharya, Rupak; Pal, Bipul; Bansal, Bhavtosh
- Applied Physics Letters, Vol. 100, Issue 22
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
journal, September 1997
- Wright, A. F.
- Journal of Applied Physics, Vol. 82, Issue 6
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
journal, February 2008
- Rinke, Patrick; Winkelnkemper, M.; Qteish, A.
- Physical Review B, Vol. 77, Issue 7
Polar ( , ) / Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem
journal, April 2020
- Tanner, Daniel S. P.; Dawson, Philip; Kappers, Menno J.
- Physical Review Applied, Vol. 13, Issue 4
Unusual properties of the fundamental band gap of InN
journal, May 2002
- Wu, J.; Walukiewicz, W.; Yu, K. M.
- Applied Physics Letters, Vol. 80, Issue 21
Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs
journal, January 1987
- Tränkle, G.; Leier, H.; Forchel, A.
- Physical Review Letters, Vol. 58, Issue 4
The polarization field in Al-rich AlGaN multiple quantum wells
journal, May 2019
- Guo, Qiang; Kirste, Ronny; Mita, Seiji
- Japanese Journal of Applied Physics, Vol. 58, Issue SC
Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations
journal, December 2022
- Finn, Robert; Schulz, Stefan
- The Journal of Chemical Physics
Efficiency improvement progress in green, yellow and red III-Nitride LEDs
conference, March 2022
- Armitage, Rob; Ishikawa, Tsutomu; Kim, Hee Jin
- Light-Emitting Devices, Materials, and Applications XXVI
High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime
journal, February 2014
- Davies, Matthew J.; Badcock, Tom J.; Dawson, Philip
- physica status solidi c, Vol. 11, Issue 3-4
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
journal, November 2004
- Chakraborty, Arpan; Haskell, B. A.; Keller, S.
- Applied Physics Letters, Vol. 85, Issue 22
3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
journal, May 2016
- Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng
- AIP Advances, Vol. 6, Issue 5
Band-gap renormalization in semiconductor quantum wells
journal, April 1990
- Das Sarma, S.; Jalabert, R.; Yang, S. -R. Eric
- Physical Review B, Vol. 41, Issue 12
Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
journal, December 2019
- Rashidi, Arman; Monavarian, Morteza; Aragon, Andrew
- Scientific Reports, Vol. 9, Issue 1
Microstructural origins of localization in InGaN quantum wells
journal, August 2010
- Oliver, R. A.; Bennett, S. E.; Zhu, T.
- Journal of Physics D: Applied Physics, Vol. 43, Issue 35
Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients
journal, January 2017
- Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew
- Optics Express, Vol. 25, Issue 16
Multiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models
journal, February 2021
- Chaudhuri, D.; O’Donovan, M.; Streckenbach, T.
- Journal of Applied Physics, Vol. 129, Issue 7
Band-gap renormalization in highly excited GaN
journal, February 2004
- Nagai, Takehiko; Inagaki, Takeshi J.; Kanemitsu, Yoshihiko
- Applied Physics Letters, Vol. 84, Issue 8
Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations
journal, October 2021
- Fedorova, Olga A.; Bulashevich, Kirill A.; Karpov, Sergey Yu.
- Optics Express, Vol. 29, Issue 22
Review—The Physics of Recombinations in III-Nitride Emitters
journal, January 2020
- David, Aurelien; Young, Nathan G.; Lund, Cory
- ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
journal, April 2011
- Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T.
- Applied Physics Letters, Vol. 98, Issue 16
Auger recombination in InGaN measured by photoluminescence
journal, October 2007
- Shen, Y. C.; Mueller, G. O.; Watanabe, S.
- Applied Physics Letters, Vol. 91, Issue 14
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
journal, January 2013
- Davies, M. J.; Badcock, T. J.; Dawson, P.
- Applied Physics Letters, Vol. 102, Issue 2
Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects
journal, November 1999
- Hangleiter, A.; Im, J. S.; Off, J.
- physica status solidi (b), Vol. 216, Issue 1
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
journal, October 2018
- Christian, G. M.; Schulz, S.; Kappers, M. J.
- Physical Review B, Vol. 98, Issue 15
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
journal, February 2002
- Kuokstis, E.; Yang, J. W.; Simin, G.
- Applied Physics Letters, Vol. 80, Issue 6
What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
journal, November 2018
- Robin, Y.; Pristovsek, M.; Amano, H.
- Journal of Applied Physics, Vol. 124, Issue 18
Universal behavior of exchange-correlation energy in electron-hole liquid
journal, May 1982
- Vashishta, P.; Kalia, R. K.
- Physical Review B, Vol. 25, Issue 10
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
journal, December 2012
- Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G.
- Applied Physics Letters, Vol. 101, Issue 23
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
journal, October 1998
- Chichibu, S. F.; Abare, A. C.; Minsky, M. S.
- Applied Physics Letters, Vol. 73, Issue 14
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
journal, April 1999
- Della Sala, Fabio; Di Carlo, Aldo; Lugli, Paolo
- Applied Physics Letters, Vol. 74, Issue 14
Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
journal, September 2020
- Frankerl, Christian; Nippert, Felix; Gomez-Iglesias, Alvaro
- Applied Physics Letters, Vol. 117, Issue 10
High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
journal, July 2011
- Zhao, Yuji; Tanaka, Shinichi; Pan, Chih-Chien
- Applied Physics Express, Vol. 4, Issue 8
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
journal, February 2011
- Moses, Poul Georg; Miao, Maosheng; Yan, Qimin
- The Journal of Chemical Physics, Vol. 134, Issue 8
Disorder-induced rapid localization of electron-hole plasmas in highly excitedIn x Ga 1 − x N mixed crystals
journal, February 2008
- Hirano, Daisuke; Tayagaki, Takeshi; Kanemitsu, Yoshihiko
- Physical Review B, Vol. 77, Issue 7
Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar ( 20 2 ¯ 1 ¯) InGaN/GaN light-emitting diodes
journal, July 2018
- Rashidi, A.; Monavarian, M.; Aragon, A.
- Applied Physics Letters, Vol. 113, Issue 3