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Title: Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Abstract

We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [1];  [3];  [4];  [1];  [5]
+ Show Author Affiliations
  1. Univ. of California, Santa Barbara, CA (United States)
  2. Korea Inst. of Science and Technology, Seoul (Korea, Republic of)
  3. EAG Laboratories, Raleigh, NC (United States)
  4. Quintessent Inc., Santa Barbara, CA (United States)
  5. Intel Corporation, Santa Clara, CA (United States)
Publication Date:
Research Org.:
Columbia Univ., New York, NY (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)
OSTI Identifier:
1803987
Alternate Identifier(s):
OSTI ID: 1638413
Grant/Contract Number:  
AR0000843; 1650114; DMR 1720256; AR00000843
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 128; Journal Issue: 2; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics

Citation Formats

Mukherjee, Kunal, Selvidge, Jennifer, Jung, Daehwan, Norman, Justin, Taylor, Aidan A., Salmon, Mike, Liu, Alan Y., Bowers, John E., and Herrick, Robert W. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon. United States: N. p., 2020. Web. doi:10.1063/1.5143606.
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Mukherjee, Kunal, Selvidge, Jennifer, Jung, Daehwan, Norman, Justin, Taylor, Aidan A., Salmon, Mike, Liu, Alan Y., Bowers, John E., & Herrick, Robert W. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon. United States. https://doi.org/10.1063/1.5143606
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Mukherjee, Kunal, Selvidge, Jennifer, Jung, Daehwan, Norman, Justin, Taylor, Aidan A., Salmon, Mike, Liu, Alan Y., Bowers, John E., and Herrick, Robert W. Tue . "Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon". United States. https://doi.org/10.1063/1.5143606. https://www.osti.gov/servlets/purl/1803987.
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@article{osti_1803987,
title = {Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon},
author = {Mukherjee, Kunal and Selvidge, Jennifer and Jung, Daehwan and Norman, Justin and Taylor, Aidan A. and Salmon, Mike and Liu, Alan Y. and Bowers, John E. and Herrick, Robert W.},
abstractNote = {We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.},
doi = {10.1063/1.5143606},
journal = {Journal of Applied Physics},
number = 2,
volume = 128,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2020},
month = {Tue Jul 14 00:00:00 EDT 2020}
}
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https://doi.org/10.1063/1.5143606
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