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Title: Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

Abstract

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Authors:
; ;  [1];  [1];  [2]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22311143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BUFFERS; DEPOSITION; DISLOCATIONS; DRILLING; DROPLETS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; QUANTUM DOTS

Citation Formats

Huang, S., Kim, S. J., Pan, X. Q., Goldman, R. S., E-mail: rsgold@umich.edu, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots. United States: N. p., 2014. Web. doi:10.1063/1.4891330.
Huang, S., Kim, S. J., Pan, X. Q., Goldman, R. S., E-mail: rsgold@umich.edu, & Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots. United States. doi:10.1063/1.4891330.
Huang, S., Kim, S. J., Pan, X. Q., Goldman, R. S., E-mail: rsgold@umich.edu, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Mon . "Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots". United States. doi:10.1063/1.4891330.
@article{osti_22311143,
title = {Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots},
author = {Huang, S. and Kim, S. J. and Pan, X. Q. and Goldman, R. S., E-mail: rsgold@umich.edu and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109},
abstractNote = {We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.},
doi = {10.1063/1.4891330},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}