Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells
Abstract
High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiOx layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiOx layer, the charge carriers can cross this layer by tunneling (<2 nm SiOx thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiOx layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiOx contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiOx layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiOx layer. Our results show that the pinholes in the SiOx layer preferentially form in different locations based on the annealing conditions used to form the device.more »
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1755723
- Report Number(s):
- NREL/JA-5K00-77115
Journal ID: ISSN 1944-8244; MainId:26061;UUID:b29e7e98-4068-4bd6-80ad-3779ff0ae32a;MainAdminID:19044
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 50; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; EBIC; oxide passivation; pinholes; pyramid texture; silicon solar cell; passivating contact; surface texture
Citation Formats
Guthrey, Harvey, Lima Salles, Caroline, Kale, Abhijit S., Nemeth, William, Page, Matthew, Agarwal, Sumit, Young, David L., Al-Jassim, Mowafak, and Stradins, Paul. Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells. United States: N. p., 2020.
Web. doi:10.1021/acsami.0c12795.
Guthrey, Harvey, Lima Salles, Caroline, Kale, Abhijit S., Nemeth, William, Page, Matthew, Agarwal, Sumit, Young, David L., Al-Jassim, Mowafak, & Stradins, Paul. Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells. United States. https://doi.org/10.1021/acsami.0c12795
Guthrey, Harvey, Lima Salles, Caroline, Kale, Abhijit S., Nemeth, William, Page, Matthew, Agarwal, Sumit, Young, David L., Al-Jassim, Mowafak, and Stradins, Paul. Tue .
"Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells". United States. https://doi.org/10.1021/acsami.0c12795. https://www.osti.gov/servlets/purl/1755723.
@article{osti_1755723,
title = {Effect of Surface Texture on Pinhole Formation in SiOx-Based Passivated Contacts for High-Performance Silicon Solar Cells},
author = {Guthrey, Harvey and Lima Salles, Caroline and Kale, Abhijit S. and Nemeth, William and Page, Matthew and Agarwal, Sumit and Young, David L. and Al-Jassim, Mowafak and Stradins, Paul},
abstractNote = {High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiOx layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiOx layer, the charge carriers can cross this layer by tunneling (<2 nm SiOx thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiOx layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiOx contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiOx layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiOx layer. Our results show that the pinholes in the SiOx layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.},
doi = {10.1021/acsami.0c12795},
journal = {ACS Applied Materials and Interfaces},
number = 50,
volume = 12,
place = {United States},
year = {Tue Dec 01 00:00:00 EST 2020},
month = {Tue Dec 01 00:00:00 EST 2020}
}
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