Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells

Kale, Abhijit S.; Nemeth, William; Guthrey, Harvey; Kennedy, Ellis; Norman, Andrew G.; Page, Matthew; Al-Jassim, Mowafak; Young, David L.; Agarwal, Sumit; Stradins, Paul

doi:10.1063/1.5081832

Title: Understanding the charge transport mechanisms through ultrathin SiO_x layers in passivated contacts for high-efficiency silicon solar cells

Abstract

We report on the microscopic structure of the SiO_x layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable high-efficiency crystalline Si (c-Si) solar cells. Using electron beam induced current (EBIC) measurements, we accurately map nanoscale conduction-enabling pinholes in 2.2 nm thick SiOx layers in a poly-Si/SiO_x/c-Si stack. These conduction enabling pinholes appear as bright spots in EBIC maps due to carrier transport and collection limitations introduced by the insulating 2.2 nm SiO_x layer. Performing high-resolution transmission electron microscopy at a bright spot identified with EBIC reveals that conduction pinholes in SiO_x can be regions of thin tunneling SiO_x rather than a geometric pinhole. Additionally, selectively etching the underlying poly-Si layer in contacts with 1.5 and 2.2 nm thick SiO_x layers using tetramethylammonium hydroxide results in pinhole-like etch features in both contacts. However, EBIC measurements for a contact with a thinner, 1.5 nm SiO_x layer do not reveal pinholes, which is consistent with uniform tunneling transport through the 1.5 nm SiO_x layer. Finally, we theoretically show that reducing the metal to the c-Si contact size from microns, like in the p-type passivated emitter rear contact, to tens of nanometers, like in poly-Si contacts, allows lowering of themore »« less

Authors:

Kale, Abhijit S. ^[1]; Nemeth, William ^[2]; Guthrey, Harvey ^[2]; Kennedy, Ellis ^[3]; Norman, Andrew G. ^[2]; Page, Matthew ^[2]; Al-Jassim, Mowafak ^[2]; Young, David L. ^[2]; Agarwal, Sumit ^[4]; Stradins, Paul ^[2]

Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of California, Berkeley, CA (United States)
Colorado School of Mines, Golden, CO (United States)

Publication Date:: Wed Feb 27 00:00:00 EST 2019

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1502791

Report Number(s):: NREL/JA-5900-72682
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 8; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; silicon solar cell; passivated contact; silicon oxide; tunneling; oxide pinhole; electron beam induced current

Citation Formats


                    Kale, Abhijit S., Nemeth, William, Guthrey, Harvey, Kennedy, Ellis, Norman, Andrew G., Page, Matthew, Al-Jassim, Mowafak, Young, David L., Agarwal, Sumit, and Stradins, Paul. Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5081832.

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                    Kale, Abhijit S., Nemeth, William, Guthrey, Harvey, Kennedy, Ellis, Norman, Andrew G., Page, Matthew, Al-Jassim, Mowafak, Young, David L., Agarwal, Sumit, & Stradins, Paul. Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells.  United States.  https://doi.org/10.1063/1.5081832

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                    Kale, Abhijit S., Nemeth, William, Guthrey, Harvey, Kennedy, Ellis, Norman, Andrew G., Page, Matthew, Al-Jassim, Mowafak, Young, David L., Agarwal, Sumit, and Stradins, Paul. Wed .  
"Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells".  United States.  https://doi.org/10.1063/1.5081832.  https://www.osti.gov/servlets/purl/1502791.

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@article{osti_1502791,

  title        = {Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells},

  author       = {Kale, Abhijit S. and Nemeth, William and Guthrey, Harvey and Kennedy, Ellis and Norman, Andrew G. and Page, Matthew and Al-Jassim, Mowafak and Young, David L. and Agarwal, Sumit and Stradins, Paul},

  abstractNote = {We report on the microscopic structure of the SiOx layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable high-efficiency crystalline Si (c-Si) solar cells. Using electron beam induced current (EBIC) measurements, we accurately map nanoscale conduction-enabling pinholes in 2.2 nm thick SiOx layers in a poly-Si/SiOx/c-Si stack. These conduction enabling pinholes appear as bright spots in EBIC maps due to carrier transport and collection limitations introduced by the insulating 2.2 nm SiOx layer. Performing high-resolution transmission electron microscopy at a bright spot identified with EBIC reveals that conduction pinholes in SiOx can be regions of thin tunneling SiOx rather than a geometric pinhole. Additionally, selectively etching the underlying poly-Si layer in contacts with 1.5 and 2.2 nm thick SiOx layers using tetramethylammonium hydroxide results in pinhole-like etch features in both contacts. However, EBIC measurements for a contact with a thinner, 1.5 nm SiOx layer do not reveal pinholes, which is consistent with uniform tunneling transport through the 1.5 nm SiOx layer. Finally, we theoretically show that reducing the metal to the c-Si contact size from microns, like in the p-type passivated emitter rear contact, to tens of nanometers, like in poly-Si contacts, allows lowering of the unpassivated contact area by several orders of magnitude, thus resulting in excellent passivation, as has been demonstrated for these contacts.},

  doi          = {10.1063/1.5081832},

  journal      = {Applied Physics Letters},

  number       = 8,

  volume       = 114,

  place        = {United States},

  year         = {Wed Feb 27 00:00:00 EST 2019},

  month        = {Wed Feb 27 00:00:00 EST 2019}

}

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Works referencing / citing this record:

Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell
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Title: Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells

Abstract

Citation Formats

Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's journal, May 1999

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Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities journal, July 2017

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High-gain bipolar transistors with polysilicon tunnel junction emitter contacts journal, July 1985

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Electron beam induced current studies of MS and MIS devices on CdS journal, January 1980

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Surface passivation of crystalline silicon solar cells: a review journal, January 2000

Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions journal, October 2018

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts journal, December 2016

An accurate calculation of spreading resistance journal, April 2006

n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation journal, December 2017

Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide journal, June 2017

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2 O 3 studied with deuterium journal, May 2018

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Structure and morphology of polycrystalline silicon‐single crystal silicon interfaces journal, April 1985

Direct observation of a scaling effect on effective minority carrier lifetimes journal, October 1994

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Stress‐related problems in silicon technology journal, September 1991

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Title: Understanding the charge transport mechanisms through ultrathin SiO_x layers in passivated contacts for high-efficiency silicon solar cells

Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's
journal, May 1999

A 720 mV open circuit voltage SiO _x : c ‐Si:SiO _x double heterostructure solar cell
journal, December 1985

Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities
journal, July 2017

Tunnel oxide passivated contacts as an alternative to partial rear contacts
journal, December 2014

High-gain bipolar transistors with polysilicon tunnel junction emitter contacts
journal, July 1985

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
journal, September 2001

Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
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Electron beam induced current studies of MS and MIS devices on CdS
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Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells
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Surface passivation of crystalline silicon solar cells: a review
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Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions
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IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts
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An accurate calculation of spreading resistance
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n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
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Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide
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