Title: Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

Abstract

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H₂S, H₂, and NO₂ at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.

Authors:

Fahad, Hossain Mohammad ^[1]; Shiraki, Hiroshi ^[2]; Amani, Matin ^[1]; Zhang, Chuchu ^[3]; Hebbar, Vivek Srinivas  ^[3];

• Search DOE PAGES for author "Hebbar, Vivek Srinivas"
• Search DOE PAGES for ORCID "0000-0001-7825-8931"

Gao, Wei ^[1]; Ota, Hiroki ^[1]; Hettick, Mark  ^[1];

• Search DOE PAGES for author "Hettick, Mark"
• Search DOE PAGES for ORCID "0000-0003-1860-5051"

Kiriya, Daisuke ^[1]; Chen, Yu-Ze  ^[4];

• Search DOE PAGES for author "Chen, Yu-Ze"
• Search DOE PAGES for ORCID "0000-0001-8504-1458"

Chueh, Yu-Lun ^[4]; Javey, Ali ^[1]

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+ Show Author Affiliations

1. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering an Computer Sciences; Univ. of California, Berkeley, CA (United States). Berkeley sensor and Actuator Center; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
2. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering an Computer Sciences; Univ. of California, Berkeley, CA (United States). Berkeley sensor and Actuator Center
3. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering an Computer Sciences
4. Tsinghua Univ., Beijing (China). Department of Materials Science and Engineering

Publication Date:

Fri Mar 24 00:00:00 EDT 2017

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE Office of Science (SC)

OSTI Identifier:

1625968

Grant/Contract Number:  

AC02-05CH11231; 105-3113-E-007-003-CC2; 104-2628-M-007-004-MY3; 104-2221-E-007-048-MY3; 105-2633-M-007-003; 104-2622-M-007-002-CC2

Resource Type:

Accepted Manuscript

Journal Name:

Science Advances

Additional Journal Information:

Journal Volume: 3; Journal Issue: 3; Journal ID: ISSN 2375-2548

Publisher:

AAAS

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; Science & Technology - Other Topics