Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange
Abstract
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next-generation electronic and electro-optical devices. We have achieved facile fabrication of MoS2 thin films on CdS nanowires by cation exchange in solution at room temperature and importantly observed their extraordinary magnetic properties. We establish the atomic structure of the MoS2/CdS heterostructure by taking atomic images of the MoS2/CdS interface as well as performing first-principles density functional geometry optimizations and scanning transmission electron microscopy annular dark field image simulations. Furthermore, our first-principles density functional calculations for the MoS2/CdS heterostructure reveal that the magnetism in the MoS2/CdS heterostructure stems from the ferromagnetic MoS2 monolayer next to the MoS2/CdS interface. The ferromagnetism is attributed to the partial occupation of the Mo dx2–y2/dxy conduction band in the interfacial MoS2 monolayer caused by the mixed covalent–ionic bonding among the MoS2 and CdS monolayers near the MoS2/CdS interface. Finally, these findings of the ferromagnetic MoS2 monolayer with large spin polarization at the MoS2/semiconductor interface suggest a new route for fabrication of the transition metal dichalcogenide-based magnetic semiconductor multilayers for applications in spintronic devices.
- Authors:
-
- National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Materials Science and Engineering
- National Tsing Hua Univ., Hsinchu (Taiwan). Dept. of Physics
- National Applied Research Lab., Hsinchu (Taiwan). National Nano Device Lab.
- National Taiwan Univ., Taipei (Taiwan). Dept. of Physics; National Center for Theoretical Sciences, Hsinchu (Taiwan). Physics Division
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- Ministry of Science and Technology (MOST) (Taiwan)
- OSTI Identifier:
- 1480741
- Grant/Contract Number:
- 103-2221-E-007-003; 104-2112-M-002-002-MY3
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry. C
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 40; Journal ID: ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Tan, Chih-Shan, Lu, Yu-Jung, Chen, Chun-Chi, Liu, Pei-Hsuan, Gwo, Shangjr, Guo, Guang-Yu, and Chen, Lih-Juann. Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange. United States: N. p., 2016.
Web. doi:10.1021/acs.jpcc.6b07679.
Tan, Chih-Shan, Lu, Yu-Jung, Chen, Chun-Chi, Liu, Pei-Hsuan, Gwo, Shangjr, Guo, Guang-Yu, & Chen, Lih-Juann. Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange. United States. https://doi.org/10.1021/acs.jpcc.6b07679
Tan, Chih-Shan, Lu, Yu-Jung, Chen, Chun-Chi, Liu, Pei-Hsuan, Gwo, Shangjr, Guo, Guang-Yu, and Chen, Lih-Juann. Mon .
"Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange". United States. https://doi.org/10.1021/acs.jpcc.6b07679. https://www.osti.gov/servlets/purl/1480741.
@article{osti_1480741,
title = {Magnetic MoS2 Interface Monolayer on a CdS Nanowire by Cation Exchange},
author = {Tan, Chih-Shan and Lu, Yu-Jung and Chen, Chun-Chi and Liu, Pei-Hsuan and Gwo, Shangjr and Guo, Guang-Yu and Chen, Lih-Juann},
abstractNote = {MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next-generation electronic and electro-optical devices. We have achieved facile fabrication of MoS2 thin films on CdS nanowires by cation exchange in solution at room temperature and importantly observed their extraordinary magnetic properties. We establish the atomic structure of the MoS2/CdS heterostructure by taking atomic images of the MoS2/CdS interface as well as performing first-principles density functional geometry optimizations and scanning transmission electron microscopy annular dark field image simulations. Furthermore, our first-principles density functional calculations for the MoS2/CdS heterostructure reveal that the magnetism in the MoS2/CdS heterostructure stems from the ferromagnetic MoS2 monolayer next to the MoS2/CdS interface. The ferromagnetism is attributed to the partial occupation of the Mo dx2–y2/dxy conduction band in the interfacial MoS2 monolayer caused by the mixed covalent–ionic bonding among the MoS2 and CdS monolayers near the MoS2/CdS interface. Finally, these findings of the ferromagnetic MoS2 monolayer with large spin polarization at the MoS2/semiconductor interface suggest a new route for fabrication of the transition metal dichalcogenide-based magnetic semiconductor multilayers for applications in spintronic devices.},
doi = {10.1021/acs.jpcc.6b07679},
journal = {Journal of Physical Chemistry. C},
number = 40,
volume = 120,
place = {United States},
year = {Mon Oct 03 00:00:00 EDT 2016},
month = {Mon Oct 03 00:00:00 EDT 2016}
}
Web of Science
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