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Title: Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Abstract

Abstract To exploit their charge transport properties in transistors, semiconducting carbon nanotubes must be assembled into aligned arrays comprised of individualized nanotubes at optimal packing densities. However, achieving this control on the wafer‐scale is challenging. Here, solution‐based shear in substrate‐wide, confined channels is investigated to deposit continuous films of well‐aligned, individualized, semiconducting nanotubes. Polymer‐wrapped nanotubes in organic ink are forced through sub‐mm tall channels, generating shear up to 10 000 s −1 uniformly aligning nanotubes across substrates. The ink volume and concentration, channel height, and shear rate dependencies are elucidated. Optimized conditions enable alignment within a ±32° window, at 50 nanotubes µm −1 , on 10 × 10 cm 2 substrates. Transistors (channel length of 1–5 µm) are fabricated parallel and perpendicular to the alignment. The parallel transistors perform with 7× faster charge carrier mobility (101 and 49 cm 2 V −1 s −1 assuming array and parallel‐plate capacitances, respectively) with high on/off ratio of 10 5 . The spatial uniformity varies ±10% in density, ±2° in alignment, and ±7% in mobility. Deposition occurs within seconds per wafer, and further substrate scaling is viable. Compared to random networks, aligned nanotube films promise to be a superior platform for applications includingmore » sensors, flexible/stretchable electronics, and light emitting and harvesting devices.« less

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]
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  1. Univ. of Wisconsin, Madison, WI (United States)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1612372
Alternate Identifier(s):
OSTI ID: 1482746
Grant/Contract Number:  
SC0016007; 1727523; DGE-1256259; DMR-1720415; DE‐SC0016007; DMR‐1720415
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 2; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Physics; alignment; electronics; field-effect transistors; mobility; semiconductors

Citation Formats

Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, and Arnold, Michael S. Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors. United States: N. p., 2018. Web. doi:10.1002/aelm.201800593.
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Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, & Arnold, Michael S. Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors. United States. https://doi.org/10.1002/aelm.201800593
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Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, and Arnold, Michael S. Mon . "Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors". United States. https://doi.org/10.1002/aelm.201800593. https://www.osti.gov/servlets/purl/1612372.
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@article{osti_1612372,
title = {Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors},
author = {Jinkins, Katherine R. and Chan, Jason and Jacobberger, Robert M. and Berson, Arganthaël and Arnold, Michael S.},
abstractNote = {Abstract To exploit their charge transport properties in transistors, semiconducting carbon nanotubes must be assembled into aligned arrays comprised of individualized nanotubes at optimal packing densities. However, achieving this control on the wafer‐scale is challenging. Here, solution‐based shear in substrate‐wide, confined channels is investigated to deposit continuous films of well‐aligned, individualized, semiconducting nanotubes. Polymer‐wrapped nanotubes in organic ink are forced through sub‐mm tall channels, generating shear up to 10 000 s −1 uniformly aligning nanotubes across substrates. The ink volume and concentration, channel height, and shear rate dependencies are elucidated. Optimized conditions enable alignment within a ±32° window, at 50 nanotubes µm −1 , on 10 × 10 cm 2 substrates. Transistors (channel length of 1–5 µm) are fabricated parallel and perpendicular to the alignment. The parallel transistors perform with 7× faster charge carrier mobility (101 and 49 cm 2 V −1 s −1 assuming array and parallel‐plate capacitances, respectively) with high on/off ratio of 10 5 . The spatial uniformity varies ±10% in density, ±2° in alignment, and ±7% in mobility. Deposition occurs within seconds per wafer, and further substrate scaling is viable. Compared to random networks, aligned nanotube films promise to be a superior platform for applications including sensors, flexible/stretchable electronics, and light emitting and harvesting devices.},
doi = {10.1002/aelm.201800593},
journal = {Advanced Electronic Materials},
number = 2,
volume = 5,
place = {United States},
year = {Mon Nov 19 00:00:00 EST 2018},
month = {Mon Nov 19 00:00:00 EST 2018}
}
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https://doi.org/10.1002/aelm.201800593
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