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Title: High performance transistors via aligned polyfluorene-sorted carbon nanotubes

Abstract

We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronicmore » devices.« less

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22293079
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON NANOTUBES; CARRIER MOBILITY; CHARGE TRANSPORT; FIELD EFFECT TRANSISTORS; MODULATION; PERFORMANCE; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Brady, Gerald J., Joo, Yongho, Singha Roy, Susmit, Gopalan, Padma, and Arnold, Michael S., E-mail: msarnold@wisc.edu. High performance transistors via aligned polyfluorene-sorted carbon nanotubes. United States: N. p., 2014. Web. doi:10.1063/1.4866577.
Brady, Gerald J., Joo, Yongho, Singha Roy, Susmit, Gopalan, Padma, & Arnold, Michael S., E-mail: msarnold@wisc.edu. High performance transistors via aligned polyfluorene-sorted carbon nanotubes. United States. doi:10.1063/1.4866577.
Brady, Gerald J., Joo, Yongho, Singha Roy, Susmit, Gopalan, Padma, and Arnold, Michael S., E-mail: msarnold@wisc.edu. Mon . "High performance transistors via aligned polyfluorene-sorted carbon nanotubes". United States. doi:10.1063/1.4866577.
@article{osti_22293079,
title = {High performance transistors via aligned polyfluorene-sorted carbon nanotubes},
author = {Brady, Gerald J. and Joo, Yongho and Singha Roy, Susmit and Gopalan, Padma and Arnold, Michael S., E-mail: msarnold@wisc.edu},
abstractNote = {We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.},
doi = {10.1063/1.4866577},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 104,
place = {United States},
year = {2014},
month = {2}
}