Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
Abstract
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.
- Authors:
-
- Univ. of California, Berkeley, CA (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of California, Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States); Harbin Inst. of Technology, Shenzhen (China)
- Univ. of Central Florida, Orlando, FL (United States)
- Univ. of Tennessee, Knoxville, TN (United States)
- Lovely Professional Univ., Phagwara, Punjab (India)
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO)
- OSTI Identifier:
- 1603633
- Grant/Contract Number:
- AC02-05CH11231; W911NF-13-1-0428; SC0004993; DMR-1708615; W911NF-14-1-0104
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; materials science; nanoscience and technology; physics
Citation Formats
Taz, Humaira, Prasad, Bhagwati, Huang, Yen-Lin, Chen, Zuhuang, Hsu, Shang-Lin, Xu, Ruijuan, Thakare, Vishal, Sakthivel, Tamil Selvan, Liu, Chenze, Hettick, Mark, Mukherjee, Rupam, Seal, Sudipta, Martin, Lane W., Javey, Ali, Duscher, Gerd, Ramesh, Ramamoorthy, and Kalyanaraman, Ramki. Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics. United States: N. p., 2020.
Web. doi:10.1038/s41598-020-58592-5.
Taz, Humaira, Prasad, Bhagwati, Huang, Yen-Lin, Chen, Zuhuang, Hsu, Shang-Lin, Xu, Ruijuan, Thakare, Vishal, Sakthivel, Tamil Selvan, Liu, Chenze, Hettick, Mark, Mukherjee, Rupam, Seal, Sudipta, Martin, Lane W., Javey, Ali, Duscher, Gerd, Ramesh, Ramamoorthy, & Kalyanaraman, Ramki. Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics. United States. https://doi.org/10.1038/s41598-020-58592-5
Taz, Humaira, Prasad, Bhagwati, Huang, Yen-Lin, Chen, Zuhuang, Hsu, Shang-Lin, Xu, Ruijuan, Thakare, Vishal, Sakthivel, Tamil Selvan, Liu, Chenze, Hettick, Mark, Mukherjee, Rupam, Seal, Sudipta, Martin, Lane W., Javey, Ali, Duscher, Gerd, Ramesh, Ramamoorthy, and Kalyanaraman, Ramki. Thu .
"Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics". United States. https://doi.org/10.1038/s41598-020-58592-5. https://www.osti.gov/servlets/purl/1603633.
@article{osti_1603633,
title = {Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics},
author = {Taz, Humaira and Prasad, Bhagwati and Huang, Yen-Lin and Chen, Zuhuang and Hsu, Shang-Lin and Xu, Ruijuan and Thakare, Vishal and Sakthivel, Tamil Selvan and Liu, Chenze and Hettick, Mark and Mukherjee, Rupam and Seal, Sudipta and Martin, Lane W. and Javey, Ali and Duscher, Gerd and Ramesh, Ramamoorthy and Kalyanaraman, Ramki},
abstractNote = {A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.},
doi = {10.1038/s41598-020-58592-5},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United States},
year = {Thu Feb 27 00:00:00 EST 2020},
month = {Thu Feb 27 00:00:00 EST 2020}
}
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