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Title: Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric–ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this paper, we investigated the magnetoelectric coupling in a self-assembled BiFeO 3 (BFO)–CoFe 2O 4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO–CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Finally and therefore, this study deliversmore » a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.« less
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [2] ;  [5] ;  [6] ;  [7] ; ORCiD logo [8] ;  [5] ;  [7] ;  [4] ;  [3] ;  [1] ; ORCiD logo [9]
  1. National Chiao Tung Univ., Hsinchu (Taiwan). Dept. of Electrophysics
  2. National Chiao Tung Univ., Hsinchu (Taiwan). Dept. of Materials Science and Engineering
  3. Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy. CeNSCMR
  4. Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering
  5. National Cheng Kung Univ., Tainan (Taiwan). Dept. of Physics
  6. National Chung Hsing Univ., Taichung (Taiwan). Dept. of Materials Science and Engineering
  7. Academia Sinica, Taipei (Taiwan). Inst. of Physics
  8. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
  9. National Chiao Tung Univ., Hsinchu (Taiwan). Dept. of Electrophysics. Dept. of Materials Science and Engineering; Academia Sinica, Taipei (Taiwan). Inst. of Physics; Industrial Technology Research Inst., Hsinchu (Taiwan). Material and Chemical Research Lab.
Publication Date:
Report Number(s):
BNL-113969-2017-JA
Journal ID: ISSN 1936-0851; R&D Project: 16060; 16060; KC0403020
Grant/Contract Number:
SC0012704; DMR-1410714; MOST 103-2112-M-009-015-MY3; MOST 104-2628-E-009-005-MY2; MOST 104-2923-M-009-005-MY2; 2010-0018300; 0409-20150111
Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 11; Journal Issue: 6; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States); Pennsylvania State Univ., University Park, PA (United States); National Chiao Tung Univ., Hsinchu (Taiwan); Seoul National Univ. (Korea, Republic of)
Sponsoring Org:
USDOE; National Science Foundation (NSF); Ministry of Science and Technology (Taiwan); Seoul National Univ. (Korea, Republic of)
Contributing Orgs:
Academia Sinica, Taipei (Taiwan); National Cheng Kung Univ., Tainan (Taiwan); National Chung Hsing Univ., Taichung (Taiwan); Industrial Technology Research Inst., Hsinchu (Taiwan)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; bulk heterojunction; clamping effect; flexible; magnetoelectric; van der Waals epitaxy
OSTI Identifier:
1368662