Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics
Abstract
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Lastly, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.
- Authors:
-
[1];
[1];
[3];
[5]
- Univ. of Chicago, Chicago, IL (United States)
- Univ. of Chicago, Chicago, IL (United States); Tohoku Univ., Sendai (Japan)
- Univ. of Chicago, Chicago, IL (United States); Univ. of California, Santa Barbara, CA (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- Air Force Research Laboratory (AFRL). Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); University of Chicago. Materials Research Science & Engineering Center (MRSEC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1574328
- Alternate Identifier(s):
- OSTI ID: 1504277
- Grant/Contract Number:
- AC02-05CH11231; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Physics
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 5; Journal ID: ISSN 1745-2473
- Publisher:
- Nature Publishing Group (NPG)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, and Awschalom, David D. Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics. United States: N. p., 2019.
Web. doi:10.1038/s41567-019-0420-0.
Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, & Awschalom, David D. Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics. United States. https://doi.org/10.1038/s41567-019-0420-0
Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, and Awschalom, David D. Mon .
"Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics". United States. https://doi.org/10.1038/s41567-019-0420-0. https://www.osti.gov/servlets/purl/1574328.
@article{osti_1574328,
title = {Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics},
author = {Whiteley, Samuel J. and Wolfowicz, Gary and Anderson, Christopher P. and Bourassa, Alexandre and Ma, He and Ye, Meng and Koolstra, Gerwin and Satzinger, Kevin J. and Holt, Martin V. and Heremans, F. Joseph and Cleland, Andrew N. and Schuster, David I. and Galli, Giulia and Awschalom, David D.},
abstractNote = {Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Lastly, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.},
doi = {10.1038/s41567-019-0420-0},
journal = {Nature Physics},
number = 5,
volume = 15,
place = {United States},
year = {Mon Feb 11 00:00:00 EST 2019},
month = {Mon Feb 11 00:00:00 EST 2019}
}
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