Electrometry by optical charge conversion of deep defects in 4H-SiC

Wolfowicz, G.; Whiteley, S. J.; Awschalom, D. D.

doi:10.1073/pnas.1806998115

Title: Electrometry by optical charge conversion of deep defects in 4H-SiC

Journal Article · 16 July 2018 · Proceedings of the National Academy of Sciences of the United States of America

DOI: https://doi.org/10.1073/pnas.1806998115 · OSTI ID:1466374

^[1]; Whiteley, S. J. ^[2]; Awschalom, D. D. ^[3]

The Univ. of Chicago, Chicago, IL (United States); Tohoku Univ., Sendai (Japan)
The Univ. of Chicago, Chicago, IL (United States)
The Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41±8(V/cm)²/√Hz. In conclusion, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1466374

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 31 Vol. 115; ISSN 0027-8424

Publisher:: National Academy of Sciences, Washington, DC (United States)Copyright Statement

Country of Publication:: United States

Language:: English

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Electrical charge state identification and control for the silicon vacancy in 4H-SiC Bathen, M. E.; Galeckas, A.; Müting, J. npj Quantum Information, Vol. 5, Issue 1 https://doi.org/10.1038/s41534-019-0227-y	journal	December 2019
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Title: Electrometry by optical charge conversion of deep defects in 4H-SiC

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