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Title: Multiferroicity in atomic van der Waals heterostructures

Abstract

Materials that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d-orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients' structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr2Ge2Te6 and ferroelectric In2Se3, thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In2Se3 reverses its polarization, the magnetism of Cr2Ge2Te6 is switched, and correspondingly In2Se3 becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

Authors:
 [1];  [2];  [3]; ORCiD logo [2]; ORCiD logo [3]
  1. Univ. of California, Berkeley, CA (United States)
  2. Ulsan National Inst. of Science and Technology (Korea)
  3. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1559228
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gong, Cheng, Kim, Eun Mi, Wang, Yuan, Lee, Geunsik, and Zhang, Xiang. Multiferroicity in atomic van der Waals heterostructures. United States: N. p., 2019. Web. doi:10.1038/s41467-019-10693-0.
Gong, Cheng, Kim, Eun Mi, Wang, Yuan, Lee, Geunsik, & Zhang, Xiang. Multiferroicity in atomic van der Waals heterostructures. United States. https://doi.org/10.1038/s41467-019-10693-0
Gong, Cheng, Kim, Eun Mi, Wang, Yuan, Lee, Geunsik, and Zhang, Xiang. Fri . "Multiferroicity in atomic van der Waals heterostructures". United States. https://doi.org/10.1038/s41467-019-10693-0. https://www.osti.gov/servlets/purl/1559228.
@article{osti_1559228,
title = {Multiferroicity in atomic van der Waals heterostructures},
author = {Gong, Cheng and Kim, Eun Mi and Wang, Yuan and Lee, Geunsik and Zhang, Xiang},
abstractNote = {Materials that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d-orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients' structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr2Ge2Te6 and ferroelectric In2Se3, thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In2Se3 reverses its polarization, the magnetism of Cr2Ge2Te6 is switched, and correspondingly In2Se3 becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.},
doi = {10.1038/s41467-019-10693-0},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {Fri Jun 14 00:00:00 EDT 2019},
month = {Fri Jun 14 00:00:00 EDT 2019}
}

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Works referencing / citing this record:

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