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Title: Multifunctional two-dimensional van der Waals Janus magnet Cr-based dichalcogenide halides

Journal Article · · npj Computational Materials
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [5]
  1. Sun Yat-Sen University, Guangzhou (China); Sun Yat-Sen University, China
  2. Tsinghua University, Beijing (China); Frontier Science Center for Quantum Information, Beijing (China)
  3. Sun Yat-Sen University, Guangzhou (China)
  4. Fudan University, Shanghai (China)
  5. University of California, Irvine, CA (United States)

Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y = S, Se, Te; X = Cl, Br, I), we find that CrSX (X = Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-plane magnetization. Excitingly, by the benefit of the large magnetic moments on ligand S2- anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively. Additionally, we show that large Dzyaloshinskii–Moriya interactions give rise to skyrmion states in CrTeX (X = Cl, Br, I) under external magnetic fields. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.

Research Organization:
University of California, Irvine, CA (United States)
Sponsoring Organization:
National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-05ER46237
OSTI ID:
1978601
Journal Information:
npj Computational Materials, Journal Name: npj Computational Materials Journal Issue: 1 Vol. 8; ISSN 2057-3960
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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