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Title: Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices

Abstract

Abstract Partial shading of series‐connected thin‐film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field‐deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as‐grown nonuniformities in the Cu(In , Ga)Se 2 (CIGS) absorber layers as the points of origin for the damage induced under reverse‐bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse‐bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.

Authors:
ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Bowling Green State Univ., OH (United States)
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1545000
Alternate Identifier(s):
OSTI ID: 1542519
Report Number(s):
NREL/JA-5K00-72230
Journal ID: ISSN 1062-7995
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 27; Journal Issue: 9; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CIGS solar cell; lock-in thermography; modeling partial shading; reverse-bias breakdown

Citation Formats

Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, and Al-Jassim, Mowafak M. Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices. United States: N. p., 2019. Web. doi:10.1002/pip.3168.
Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, & Al-Jassim, Mowafak M. Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices. United States. https://doi.org/10.1002/pip.3168
Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, and Al-Jassim, Mowafak M. Mon . "Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices". United States. https://doi.org/10.1002/pip.3168. https://www.osti.gov/servlets/purl/1545000.
@article{osti_1545000,
title = {Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices},
author = {Guthrey, Harvey L. and Nardone, Marco and Johnston, Steven and Liu, Jun and Norman, Andrew and Moseley, John and Al-Jassim, Mowafak M.},
abstractNote = {Abstract Partial shading of series‐connected thin‐film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field‐deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as‐grown nonuniformities in the Cu(In , Ga)Se 2 (CIGS) absorber layers as the points of origin for the damage induced under reverse‐bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse‐bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.},
doi = {10.1002/pip.3168},
journal = {Progress in Photovoltaics},
number = 9,
volume = 27,
place = {United States},
year = {Mon Jul 15 00:00:00 EDT 2019},
month = {Mon Jul 15 00:00:00 EDT 2019}
}

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Cited by: 5 works
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Figures / Tables:

Table 1 Table 1: EDS data showing the atomic % of Cu, Ga, In, and Se in the two regions specified in Fig. 5d.

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Works referenced in this record:

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