Identification and Analysis of Partial Shading Breakdown Sites in CuInxGa(1-x)Se2 Modules
Abstract
In this paper, CuInxGa(1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailed studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.
- Authors:
-
- Colorado School of Mines, Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Forschungszentrum Julich (Germany)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1426646
- Alternate Identifier(s):
- OSTI ID: 1549003
- Report Number(s):
- NREL/JA-5K00-70651
Journal ID: ISSN 0038-092X
- Grant/Contract Number:
- AC36-08GO28308; EE0007141
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Solar Energy
- Additional Journal Information:
- Journal Volume: 161; Journal Issue: Feb. 2018; Journal ID: ISSN 0038-092X
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; imaging; reliability; accelerated aging; CIGS; thermal analysis; breakdown voltage
Citation Formats
Palmiotti, Elizabeth, Johnston, Steven, Gerber, Andreas, Guthrey, Harvey L., Rockett, Angus, Mansfield, Lorelle M, Silverman, Timothy J., and Al-Jassim, Mowafak M. Identification and Analysis of Partial Shading Breakdown Sites in CuInxGa(1-x)Se2 Modules. United States: N. p., 2017.
Web. doi:10.1016/j.solener.2017.12.019.
Palmiotti, Elizabeth, Johnston, Steven, Gerber, Andreas, Guthrey, Harvey L., Rockett, Angus, Mansfield, Lorelle M, Silverman, Timothy J., & Al-Jassim, Mowafak M. Identification and Analysis of Partial Shading Breakdown Sites in CuInxGa(1-x)Se2 Modules. United States. https://doi.org/10.1016/j.solener.2017.12.019
Palmiotti, Elizabeth, Johnston, Steven, Gerber, Andreas, Guthrey, Harvey L., Rockett, Angus, Mansfield, Lorelle M, Silverman, Timothy J., and Al-Jassim, Mowafak M. Wed .
"Identification and Analysis of Partial Shading Breakdown Sites in CuInxGa(1-x)Se2 Modules". United States. https://doi.org/10.1016/j.solener.2017.12.019. https://www.osti.gov/servlets/purl/1426646.
@article{osti_1426646,
title = {Identification and Analysis of Partial Shading Breakdown Sites in CuInxGa(1-x)Se2 Modules},
author = {Palmiotti, Elizabeth and Johnston, Steven and Gerber, Andreas and Guthrey, Harvey L. and Rockett, Angus and Mansfield, Lorelle M and Silverman, Timothy J. and Al-Jassim, Mowafak M.},
abstractNote = {In this paper, CuInxGa(1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailed studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.},
doi = {10.1016/j.solener.2017.12.019},
journal = {Solar Energy},
number = Feb. 2018,
volume = 161,
place = {United States},
year = {Wed Dec 20 00:00:00 EST 2017},
month = {Wed Dec 20 00:00:00 EST 2017}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells
journal, March 2019
- Bin Mo, Chan; Park, Se Jin; Bae, Soohyun
- Scientific Reports, Vol. 9, Issue 1
A full overview of international standards assessing the long-term stability of perovskite solar cells
journal, January 2018
- Holzhey, Philippe; Saliba, Michael
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Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se 2 photovoltaic devices
journal, June 2019
- Guthrey, Harvey; Nardone, Marco; Johnston, Steve
- Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 9
Reliability implications of partial shading on CIGS photovoltaic devices: A literature review
journal, December 2019
- Bakker, Klaas; Weeber, Arthur; Theelen, Mirjam
- Journal of Materials Research, Vol. 34, Issue 24
Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells
journal, March 2019
- Bin Mo, Chan; Park, Se Jin; Bae, Soohyun
- Scientific Reports, Vol. 9, Issue 1
Figures / Tables found in this record: