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Title: Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se 2 photovoltaic devices

Abstract

Partial shading of series-connected thin-film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field-deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as-grown nonuniformities in the Cu(In,Ga)Se 2 (CIGS) absorber layers as the points of origin for the damage induced under reverse-bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse-bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.

Authors:
ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Bowling Green State Univ., OH (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1545000
Alternate Identifier(s):
OSTI ID: 1542519
Report Number(s):
[NREL/JA-5K00-72230]
[Journal ID: ISSN 1062-7995]
Grant/Contract Number:  
[AC36-08GO28308]
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
[ Journal Volume: 27; Journal Issue: 9]; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CIGS solar cell; lock-in thermography; modeling partial shading; reverse-bias breakdown

Citation Formats

Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, and Al-Jassim, Mowafak M. Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices. United States: N. p., 2019. Web. doi:10.1002/pip.3168.
Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, & Al-Jassim, Mowafak M. Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices. United States. doi:10.1002/pip.3168.
Guthrey, Harvey L., Nardone, Marco, Johnston, Steven, Liu, Jun, Norman, Andrew, Moseley, John, and Al-Jassim, Mowafak M. Mon . "Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices". United States. doi:10.1002/pip.3168.
@article{osti_1545000,
title = {Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices},
author = {Guthrey, Harvey L. and Nardone, Marco and Johnston, Steven and Liu, Jun and Norman, Andrew and Moseley, John and Al-Jassim, Mowafak M.},
abstractNote = {Partial shading of series-connected thin-film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field-deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as-grown nonuniformities in the Cu(In,Ga)Se2 (CIGS) absorber layers as the points of origin for the damage induced under reverse-bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse-bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.},
doi = {10.1002/pip.3168},
journal = {Progress in Photovoltaics},
number = [9],
volume = [27],
place = {United States},
year = {2019},
month = {7}
}

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Works referenced in this record:

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